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    VNDS06 Search Results

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    VN45350T

    Abstract: VN0603T 2N7001 VN45350 vn4012B
    Text: H Siliconix incorporated N-CHANNEL V BR DS PART# (V) DS(ON) VGS(th) tON Ciss (V) (ns) (PF) ID (mA) PD (H) 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 30 30 10 10 10 10 10 10 38 38 35 35 16 16 35 35 0.85 0.85 0.46 0.46 0.23 0.23 0.40 0.40 2 2 2 2 2 2 2 2 3.0 3.0 2.5 2.5


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    14-PIN VQ1001J VQ1001P VQ1004P VQ1004J VQ1000J VQ1000P VQ1006P VQ1006J OT-23 VN45350T VN0603T 2N7001 VN45350 vn4012B PDF

    VN10lm

    Abstract: No abstract text available
    Text: VN061 OLL, VN 10LM N-Channel Enhancement-Mode MOS Transistors .B Ü fiSSS TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (H ) (A) PACKAGE VN0610LL 60 5 0.28 TO-92 VN10LM 60 5 0.32 TO-237 Performance Curves: VNDS06 •d 1 SOURCE


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    VN061 O-226AA) VN0610LL VN10LM O-237 VNDS06 VN0610LL VN10lm PDF

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    Abstract: No abstract text available
    Text: VN2222 SERIES N-Channel Enhancement-Mode MOS Transistors ÄlüSSÖSS PRODUCT SUMMARY PART NUMBER V BR DSS VN2222LL 60 VN2222LM 60 (V) "W •d (A) PACKAGE 7.5 0.23 TO-92 7.5 0.26 TO-237 3 DRAIN TO-237 Performance Curves: BOTTOM VIEW VNDS06 1 SOURCE 2 GATE 3 & TAB-DRAIN


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    VN2222 VN2222LL VN2222LM O-237 VNDS06 VN2222LM PDF

    Untitled

    Abstract: No abstract text available
    Text: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


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    VN0605T OT-23 VNDS06 PDF

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    Abstract: No abstract text available
    Text: JEFSSSÄS VNDS1 DIE N-Channel Enhancement-Mode MOS Transistor VNDS1CHP* 2N7000 2N7002 BS170 VN10LM VN0605T VN0610LL VN2222LL VN2222LM VQ1000J/P VNDS06 x 4 (0. 104) 0.0049 (0. 124) Source Pad 0.0041 (0. 104) 0.0049 (0. 124) •Meets or exceeds specification for all part


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    2N7000 2N7002 BS170 VN10LM VN0605T VN0610LL VN2222LL VN2222LM VQ1000J/P VNDS06 PDF

    2N7008

    Abstract: No abstract text available
    Text: 1ÔE D S I L I C O N I X INC A2SM735 0 0 m ü 3 1 T fX S ilic o n ix 2N7008 J .Æ in c o rp o ra te d T -Z 7 -Z 5 N-Channel Enhancem ent-M ode IV10S Transistor PRODUCT SUMMARY V BR DSS (V) fDS(ON) (ÍX ) Id (A) PACKAGE .60. 7,5 0.15 TO-92 2 GATE 3 DRAIN Performance Curves: VNDS06 (See Section 7)


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    A2SM735 2N7008 IV10S VNDS06 2N7008 PDF

    150X1

    Abstract: No abstract text available
    Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


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    2N7002 OT-23 VNDS06 150X1, 150X1 PDF

    VQ1000

    Abstract: VQ1000P
    Text: VQ1000 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays B tSSSA 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1000J 60 VQ1000P •d (A) PACKAGE 5.5 0.225 Plastic 60 5.5 0.225 Sidebraze Performance Curves: VNDS06 'T ,l


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    VQ1000 VQ1000J VQ1000P 14-PIN VNDS06 PDF

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    Abstract: No abstract text available
    Text: JB’SfSSfe VNDS06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA 2N7000, VN0610LL, VN2222LL Single TO-237 VN2222LM Single SOT-23 VN0605T, 2N7002 Quad 14-Pin Plastic • VQ1000J Quad 14-Pin Dual-ln-Line • VQ1000P Quad


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    VNDS06 2N7000, VN0610LL, VN2222LL VN2222LM VN0605T, 2N7002 VQ1000J VQ1000P O-226AA) PDF

    Untitled

    Abstract: No abstract text available
    Text: B fS S ffA 2N7000 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA BOTTOM VIEW Id (A) V (BR)DSS (V) 60 5 0.2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDS06 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) SYMBOL


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    2N7000 O-226AA) VNDS06 PDF

    Untitled

    Abstract: No abstract text available
    Text: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN


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    TD3002Y VNDS06 VPDS06 PDF

    VN10KM

    Abstract: VN0610L
    Text: VN0610L, VN10KE, VN10KM m SSffA N-Channel Enhancement-Mode MOS Transistors, Zener Gate Protected_ PRODUCT SUMMARY TO-92 TO-226AA PART NUMBER V (BR)DSS (V) *DS(ON) ( il) (A) PACKAGE VN0610L 60 5 0.27 TO-92 VN10KE 60 5 0.17 TO-52 VN10KM 60 5 0.31 TO-237


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    VN0610L, VN10KE, VN10KM VN0610L VN10KE VN10KM O-226AA) O-237 VNDS06 PDF