VN0220N3 Search Results

VN0220N3 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
VN0220N3		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
VN0220N3		Unknown	FET Data Book		Scan	PDF
VN0220N3		Supertex	N-Channel Enhancement-Mode Vertical DMOS Power FETs		Scan	PDF

VN0220N3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G	PDF
IRF-520 Mosfet Abstract: cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic Text: TN/TP Series Applications TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure	Original	TN0524N3 IRF-520 Mosfet cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic	PDF
ICM7555 Abstract: TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET Text: TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure 2, at voltages less than the actual BVDSS rating.	Original	TN0524N3 ICM7555 TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET	PDF
VN0220N3 Abstract: VN0216N2 VN0216N3 VN0216N5 VN0220N2 VN0220N5 VN02C VN0220 Text: SUPERTEX INC S H N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information B V ^s/ O rd e r N u m b e r / P a c k a g e ^DS ON (m ax) *D(ON) (m in) T O -3 9 T O -9 2 T O -2 20 160V 60 1A VN0216N2 VN0216N3 VN 0216N5 200V 60 1A VN 0220N2 VN0220N3	OCR Scan	fl77BEc BVD39/ O-220 VN0216N2 VN0216N3 VN0216N5 VN0220N2 VN0220N3 VN0220N5 VN0216N5 VN0220N5 VN02C VN0220	PDF
VN0210N5 Abstract: VN0355N5 VN0345N2 VN0350N2 VN0350N5 VN0360N5 VN0206ND VN0210N2 VN0210ND VN0216N2 Text: - Sí s ti: f ft * f Vd s or * Vd g € & VN0206ND SUPERTEX N V Ê Vg s fê (Ta=25°C) Id Vg s th) Id s s Ig s s Pd * /CH (V) 'S (A) m (nA) Vg s (V) {m a ) Vd s (V) (V) ft 4# F Ds(on) Vd s = Vg s max min * /CH m g fs Id (oii) Ciss (V) Crss Coss ft Jfc m	OCR Scan	VN0206ND VN0210N2 vn0210n3 VN0210N5 VN0350N5 T0-Z20 VN035QNÃ VN0355N5 T0-220 VN0355ND VN0345N2 VN0350N2 VN0360N5 VN0210ND VN0216N2	PDF
PA 0016 PIONEER Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431 Text: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete	OCR Scan	J-23548 K28742 PA 0016 PIONEER Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431	PDF