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    VJ847M Search Results

    VJ847M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VJ847M Microsemi Single Phase Bridge Scan PDF

    VJ847M Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Controlled Avalanche Bridge Rectifiers VJ247M - VJ847M A Dim. Inches C Minimum Maximum Minimum Maximum Notes F D A B C D E F G H J B G Millimeter E + AC AC (-) H .167 .441 .620 .310 .096 .555 .096 1.0 Min. .195 .215 .137 .411 .600 .295 .076 .545 .076 3.84


    Original
    VJ247M VJ847M VJ447M VJ647M PDF

    VJ247M

    Abstract: VJ447M VJ647M VJ847M
    Text: Controlled Avalanche Bridge Rectifiers VJ247M - VJ847M A Dim. Inches C Minimum Maximum Minimum Maximum Notes F D A B C D E F G H J B G Millimeter E + AC AC (-) H .167 .441 .620 .310 .096 .555 .096 1.0 Min. .195 .215 .137 .411 .600 .295 .076 .545 .076 3.84


    Original
    VJ247M VJ847M VJ247M VJ447M VJ647M VJ447M VJ647M VJ847M PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    VJ447M

    Abstract: VJ847M VJ247M VJ647M
    Text: C o n tro lle d A v a la n c h e Bridge R e c tifie r s VJ247M O / o O r VJ847M D im . In ch e s o M inim um A B C D E F G H J AC AC M illim e te r M axim um M inim um .137 .411 .600 .295 .076 .545 .076 .167 .441 .620 .310 .096 .555 .096 1.0 Min. .195 .215


    OCR Scan
    VJ247M VJ447M VJ647M VJ847M VJ247M VJ847M PDF

    VJ247

    Abstract: VJ447M VJ247M VJ647M VJ847M VJ647
    Text: Controlled Avalanche Bridge Rectifiers VJ247M - VJ847M o Dim. Inches Minimum A B C D E F G H J M illim e te r Maximum Minimum .137 .411 .600 .295 .076 .545 .076 .167 .441 .620 .310 .096 .555 .096 1.0 Min. .195 .215 Avalanche Voltage Range Microsemi Catalog Number


    OCR Scan
    VJ247M VJ847M VJ447M VJ647M VJ847M revers00 VJ247M VJ247 VJ647 PDF

    VJ847M

    Abstract: No abstract text available
    Text: Controlled Avalanche Bridge Rectifiers VJ247M O /0 + O I T" I c F Î I J_ VJ847M Dim. Inches ( ) Minimum A B C D E F G H J !1h AC AC ^ M illim eter Maximum Minimum .137 .411 .600 .295 .076 .545 .076 .167 .441 .620 .310 .096 .555 .096 1.0 Min. .195 .215 3.84


    OCR Scan
    VJ247M VJ847M VJ447M VJ647M VJ247M VJ847M PDF

    vj148m

    Abstract: VJ448M VJ647M VJ648M
    Text: MICROSEMI CORP/ MICRO SbE D bllS^O? QGG13G7 4*15 • MÖL MICRO QUALITY / EBR SEMICONDUCTOR. INC 10 Amp Epoxy Bridge Rectifiers 10 Amps DC Forward Current at Tc = 80°C 100 Amps Peak One Half Cycle Surge Current 2000 Volts Minimum Circuit-to-Case Insulation


    OCR Scan
    QGG13G7 VJ247M VJ447M QQQ13Q& vj148m VJ448M VJ647M VJ648M PDF