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    UTXQ512 Search Results

    UTXQ512 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UTXQ512 Aeroflex CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M x 1 SRAM Original PDF

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    JORDAN

    Abstract: UT8Q512 SRAM flatpack SRAM TTL UT7Q512 UT9Q512 UTXQ512
    Text: UTXQ512 SRAM Product Overview Anthony Jordan Standard Product Line Manager UTMC Microelectronic Systems 719-594-8252, jordan@utmc.aeroflex.com www.utmc.com Updated January 2000 UTXQ512 SRAM • 4Mbit density – Organized 512K x 8 – 100ns X=7 and 25ns (X=8 or X=9) access time, asynchronous


    Original     		PDF UTXQ512 100ns 100ns, 100ns 128MeV-cm2/mg Co-60 JORDAN UT8Q512 SRAM flatpack SRAM TTL UT7Q512 UT9Q512

    D4 SMD

    Abstract: UT7Q512 UT8Q512 UT9Q512 UTXQ512
    Text: UTXQ512 SRAM Frequently Asked Questions Introduction: The UTXQ512 are high-performance CMOS asynchronous static RAMs organized as 512K words by 8 bits. The following are questions frequently asked regarding these devices. Detailed information on these devices can be found in the UTXQ512


    Original     		PDF UTXQ512 UTXQ512 100ns) UT7Q512 250mils 430mils 32-lead UT8Q512 D4 SMD UT9Q512

    Memories

    Abstract: UT54ACS244 UT54ACS151 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541 UT9Q512
    Text: Aeroflex UTMC Application Note UTXQ512-AN-000 _ CONVERTING AEROFLEX UTMC UT9Q512 4M SRAM into an SEU IMMUNE 1M X 1 SRAM This application note describes how to use two UT9Q512 4M SRAMs and one UT54ACS151 logic device


    Original     		PDF UTXQ512-AN-000 UT9Q512 UT54ACS151 UT54ACS151 Memories UT54ACS244 UT54ACS245 UT54ACS365 UT54ACS373 UT54ACS374 UT54ACS541