UPT211 Search Results

UPT211 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UPT211		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
UPT211		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
UPT211		Unitrode	International Semiconductor Data Book 1981		Scan	PDF

UPT211 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: UPT211 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)850m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u» @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	UPT211 Freq70M
PN2222A MOTOROLA Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	PDF	RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 PN2222A MOTOROLA valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
2N3609 Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625 Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	PDF	RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 2N3609 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
KT503A Abstract: 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868 Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	PDF	RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 KT503A 2SC1330 BC340 LOW-POWER SILICON NPN 2N2534 45M40 2N2909 2N2868
UPT211 Abstract: UPT212 UPT213 UPT214 UPT215 URT214 2I k Text: UPT211 UPT212 UPT213 UPT214 UPT215 POWER TRANSISTORS 2 Amp, 150V, Planar NPN DESCRIPTION Unitrode power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for power supply, pulse amplifier and similar high efficiency power	OCR Scan	PDF	UPT211 UPT212 UPT213 UPT214 UPT215 130ns 300ns UPT211 ----UPT211 --UPT213 UPT215 URT214 2I k
triacs bt 804 600v Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor	OCR Scan	PDF	Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711