Untitled
Abstract: No abstract text available
Text: SEC 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER UPG503B UPG503P ABSOLUTE MAXIMUM RATINGS FEATURES SYM BO LS • W ID E O PERATING FREQ UENC Y RANGE: fiN = 3.5 to 9.0 GHz • LOW POW ER D IS SIPA TIO N • D IV IS IO N RATIO O F 4 • GUARANTEED O PERATING TEMPERATURE RANGE:
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UPG503B
UPG503P
UPG503B/P
UPG503B,
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IN4019
Abstract: PG503
Text: 9 GHz DIVIDE-BY-4 DYNAMIC PRESCALER FEATURES UPG503B UPG503P INPUT POWER vs. INPUT FREQUENCY • WIDE OPERATING FREQUENCY RANGE: fiN = 3.5 to 9 .0 GHz Ta = 25°C 1 VDD - 3 .8 V TT . V ssi= 0 V (VGG1.2 O P E N ) • DIVISION RATIO OF 4 i £ , 0 .+75°C _l \
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UPG503B
UPG503P
UPG503B/P
PG503,
IN4019
PG503
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directional coupler chip 8 GHz
Abstract: UPG503P diode 517 BF08 UPG503B
Text: NEC 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER FEATURES UPG503B UPG503P ABSOLUTE MAXIMUM RATINGS Ta- 25°q SYM BO LS • WIDE OPERATING FR EQ U EN C Y RANGE: fiN = 3.5 to 9.0 GHz V dd • LOW POW ER DISSIPATION VSS2 P in • DIVISION RATIO O F 4 Pt • GUARANTEED OPERATING TEM PERATURE RANGE:
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UPG503B
UPG503P
UPG503B/P
PG503B/P
UPG503B,
directional coupler chip 8 GHz
UPG503P
diode 517
BF08
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic
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UPG100B
UPG101B
UPG103B
UPG503B
UPG506B
UPG501P
UPG502P
UPG503P
UPG506P
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NEC Ga FET marking L
Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima
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GET-30749,
GET-30749
NE29200
NE674
uPG501B
uPG501P
uPG503B
uPG503P
uPG506B
NEC Ga FET marking L
tamagawa
gaas fet marking B
mmic amplifier marking code N5
NE272
FET marking code .N5
ne29200
NE23383B
NE292
gaas fet marking a
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prescaler 120 ghz
Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V
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