UPG107B
Abstract: mmic s3 UPG1078 BF08 UPG107P
Text: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an
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UPG107B
UPG107P
mmic s3
UPG1078
BF08
UPG107P
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT uPG107P S-BAND SPDT SWITCH CHIP DESCRIPTION T h e ¿¡PG107P is a G a A s m o n o lith ic in te g ra te d c irc u it d e s ig n e d as a S -B a n d S P D T (S in g le P ole D o ub le T hrow ) sw itch and the d e v ic e is a v a ila b le in chip form .
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uPG107P
PG107P
PG107B
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uPG107B
Abstract: No abstract text available
Text: S-BAND SPDT MMIC SWITCH FEATURES ^ 107B UPG107P IN - OUT 1 INSERTION LOSS VS. FREQUENCY ~- • WIDE OPERATING FREQUENCY BAND: DC to 3.4 GHz • SWITCHING SPEED 5 ns TYPICAL
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uPG107B
uPG107P
UPG107B,
UPG107P
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UPG107B
Abstract: BF08 UPG107P
Text: 1 E C/ CALIFORNIA NEC 5bE D DDDS73S TOT « N E C C “ 5 M I UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION T Units in mm O UTLINE BF08 U P G 1 0 7 B is an S -B a n d S P D T (Single P o le D ou ble Throw) G a A s F E T sw itch w h ich w a s d evelo p e d for radar application.
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4274m
DDDS73S
UPG107B
UPG107P
BF08
UPG107P
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Untitled
Abstract: No abstract text available
Text: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an
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UPG107B
UPG107P
UPG107B
UPG107B,
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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IC 2453
Abstract: IC-2453
Text: DATA SHEET NEC GaAs INTEGRATED CIRCUIT _ ¿¿PG107P S-BAND SPDT SWITCH CHIP DESCRIPTION The /¿PG107P is a GaAs m onolithic integrated circuit designed as a S-Band SPDT (Single Pole Double Throw) switch and the device is available in chip form. The /¿PG107P can be used from DC to 3.4 GHz and is suitable for S-band satellite com m unication system or a
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uPG107P
PG107P
IC 2453
IC-2453
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prescaler 120 ghz
Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V
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