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    UPG101P Search Results

    UPG101P Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPG101P NEC WIDE BAND AMPLIFIER CHIPS Original PDF
    UPG101P NEC MEDIUM POWER WIDE-BAND AMPLIFIER Original PDF
    UPG101P NEC MEDIUM POWER WIDE-BAND AMPLIFIER Scan PDF

    UPG101P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UPG101

    Abstract: UPG100B UPG101B UPG101P
    Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY


    Original
    PDF UPG101B UPG101P UPG101 24-Hour UPG100B UPG101B UPG101P

    UPG101B

    Abstract: UPG100B UPG101 UPG101P
    Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY • ULTRA WIDE BAND: 50 MHz to 3 GHz 10 20 • MEDIUM POWER: TYP P1dB = +18 dBm at f = 50 MHz to 3 GHz • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY


    Original
    PDF UPG101B UPG101P UPG101 24-Hour UPG101B UPG100B UPG101P

    Untitled

    Abstract: No abstract text available
    Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P p o w e r g a in a n d n o is e f i g u r e -• U L T R A W ID E B A N D : 5 0 M H z to 3 G H z vs. FREQUENCY


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    PDF UPG101B UPG101P UPG101P b427525

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT uPGIOOP, uPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿iPGIOOP and ¿iPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿iPGIOOP is low noise amplifier from 50 MHz to 3 GHz and ¿iPG101P is a medium power amplifier in the same


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    PDF uPG101P iPG101P jPG101 iPG101P MIL-STD-883 iPG100B iPG101B.

    l06S

    Abstract: No abstract text available
    Text: MEDIUM POWER WIDE-BAND AMPLIFIER UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY FEATURES_ • ULTRA WIDE BAND: 50 MHz to 3 GHz • MEDIUM POWER: +18 dBm TYP at f - 50 MHz to GHz Qf • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 ft


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    PDF UPG101B UPG101P UPG101 TA-V75 15turns l06S

    Untitled

    Abstract: No abstract text available
    Text: SEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIMENSIONS FEATURES UPG101B UPG101P Units in mm OUTLINE B08 • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27±0.1 1.27±0.1 • MEDIUM POWER: + 18 dBm TYP at f = 50 M Hz to 3 GHz 0.4 (LEADS 1,3,5,7) (LEADS 2,4,6,8) 0.6 *


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    PDF UPG101B UPG101P UPG101

    uPG101

    Abstract: UPG101B PIAB PIAB CHIP UPG101P gp 532
    Text: NEC MEDIUM POWER WIDE-BAND AMPLIFIER OUTLINE DIM ENSIONS FEATURES UPG101B UPG101P Units in mm O UTLINE B08 • U L T R A W ID E B A N D : 50 MHz to 3 GHz 1.27+01 1.27+0.1 • M E D IU M P O W E R : + 18 dB m TYP at f = 50 M Hz to 3 GHz (LEADS 2.4,6,8) 0.6 '


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    PDF UPG101B UPG101P UPG101 PIAB PIAB CHIP UPG101P gp 532

    Untitled

    Abstract: No abstract text available
    Text: MEDIUM POWER WIDE-BAND AMPLIFIER FEATURES UPG101B UPG101P POWER GAIN AND NOISE FIGURE vs. FREQUENCY ULTRA WIDE BAND: 50 MHz to 3 GHz MEDIUM POWER: +18 dBm TYP at f = 50 MHz to GHz oo •D INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Q HERMETICALLY SEALED PACKAGE ASSURES


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    PDF UPG101B UPG101P UPG101 UPG101P or30nm

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic


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    PDF UPG100B UPG101B UPG103B UPG503B UPG506B UPG501P UPG502P UPG503P UPG506P

    Untitled

    Abstract: No abstract text available
    Text: G a A s Monolithic Circuits Wideband Amplifiers Frequency Teat Gain Range Conditions dB AG (dB) RU n R L out (dB) TYP ISOL (dB) TYP P*fl- Pacta 99 FaxOn Demand TYP MAX TYP MIN (mA) TYP MAX (dB) TYP UPG100B 0.05 to 3.0 V dd = +5V V gg = -5V 16 ±1.5 2.7 +6


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    PDF UPG100B UPG101B UPG103B UPG110B UPG100P UPG101P flB08 UPG503B UPG506B

    101p1

    Abstract: IC-3144
    Text: DATA SHEET_ GaAs INTEGRATED CIRCUIT juPGIOOP, uPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿¿PG100P and ^PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿¿PG100P is low noise amplifier from 50 MHz to 3 GHz and ¿xPG101P is a medium power amplifier in the same


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    PDF uPG100P uPG101P PG100P PG101P xPG101P /xPG101P 101p1 IC-3144

    NEC Ga FET marking L

    Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
    Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima


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    PDF GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a

    prescaler 120 ghz

    Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B
    Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V


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