UPB581B Search Results

UPB581B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
UPB581B		NEC	DIVIDE- BY- 2 PRESCALER		Original	PDF

UPB581B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
upB581 nec Abstract: UPB581C BF08 UPB581 UPB581B Text: UPB581B UPB581C DIVIDE- BY- 2 PRESCALER FEATURES TEST CIRCUIT • HIGH FREQUENCY OPERATION TO 2.8 GHz UPB581B,C • WIDE BAND OPERATION VCC • SINGLE SUPPLY VOLTAGE: VCC = 5 V ±10% • COMPLEMENTARY OUTPUTS IN 1 8 2 7 3 6 4 5 * OUT DESCRIPTION The UPB581 series of devices are divide-by-2 silicon bipolar	Original	PDF	UPB581B UPB581C UPB581B UPB581 UPB581B) UPB581C) UPB581C. 24-Hour upB581 nec UPB581C BF08
Prescalers Abstract: UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014 Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an	Original	PDF	AN1014 UPB585B 24-Hour Prescalers UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014
Prescalers Abstract: UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584 Text: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an	Original	PDF	AN1014 UPB585B Prescalers UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584
Untitled Abstract: No abstract text available Text: UPB581B UPB581C DIVIDE- BY- 2 PRESCALER FEATURES_ • HIGH FREQUENCY OPERATION TO 2.8 GHz • WIDE BAND OPERATION • SINGLE SUPPLY VOLTAGE: Vcc - 5 V ±10% • COMPLEMENTARY OUTPUTS TEST CIRCUIT UPB581B.C DESCRIPTION_	OCR Scan	PDF	UPB581B UPB581C UPB581 UPB581B) UPB581C)
Untitled Abstract: No abstract text available Text: SEC UPB581A UPB581B UPB581C UPB581P DIVIDE-BY-2 PRESCALER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE A08 • H IG H FREQ UENC Y O PER ATIO N - 9.40<J> MAX “ • W ID E BAND O PERATIO N I*- 8.50(J) MAX — • SIN G LE S U PPLY VO LTAG E : Vcc = 5 V ±1 0%	OCR Scan	PDF	UPB581A UPB581B UPB581C UPB581P UPB581 UPB581P) UPB581A) UPB581B) UPB581A, UPB581B,
upb581 Abstract: No abstract text available Text: DIVIDE- BY- 2 PRESCALER ^ B581 ? UPB581C TEST CIRCUIT FEATURES HIGH FREQUENCY OPERATION TO 2.8 GHz UPB581B.C WIDE BAND OPERATION SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% COMPLEMENTARY OUTPUTS DESCRIPTION T h e U P B 581 s e rie s o f d e v ic e s are d iv id e -b y -2 s ilico n b ip o la r	OCR Scan	PDF	UPB581C UPB581B UPB581C. b427S25 upb581
upb581 Abstract: No abstract text available Text: UPB581A UPB581B UPB581C UPB581P DIVIDE- BY- 2 PRESCALER TEST CIRCUITS FEATURES UPB581A HIGH FREQUENCY OPERATION TO 2.8 GHz WIDE BAND OPERATION SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% COMPLEMENTARY OUTPUTS DESCRIPTION The UPB581 series of devices are divide-by-2 silicon bipolar	OCR Scan	PDF	UPB581A UPB581B UPB581C UPB581P UPB581A UPB581 UPB581P) UPB581A) UPB581B) UPB581C)
Untitled Abstract: No abstract text available Text: m I 1 SEC UPB581A UPB581B UPB581C UPB581P DIVIDE-BY-2 PRESCALER OUTLINE DIMENSIONS FEATURES Units in mm O UTLIN E A08 • HIGH FREQUENCY OPERATION • • WIDE BAND OPERATION 9.404* MAX “ I*- 8.50<}> MAX — • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% • TWO SEPARATE IDENTICAL OUTPUTS	OCR Scan	PDF	UPB581A UPB581B UPB581C UPB581P UPB581 UPB581P) UPB581A) UPB581B) UPB581C) divis10
UPB581C Abstract: AN-1001 BF08 UPB581 UPB581A UPB581B UPB581P upB581 nec Text: NEC UPB581A UPB581B UPB581C UPB581P DIVIDE-BY-2 P R E S C A L E R OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE A08 • HIG H FREQ UENC Y O PERATIO N • 9.404> MAX • W IDE BAND O PERATIO N — 8.50 (J) MAX — • SIN G LE SU PPLY VO LTAG E: Vcc = 5 V +10%	OCR Scan	PDF	UPB581A UPB581B UPB581C UPB581P UPB581 UPB581P) UPB581A) UPB581B) UPB581C) UPB581A, AN-1001 BF08 UPB581P upB581 nec
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	PDF	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
transistor t06 Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Frq. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX	OCR Scan	PDF
mmic a08 Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18	OCR Scan	PDF