UPB1001B Search Results

UPB1001B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
UPB1001B		Cree	1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor		Original	PDF

UPB1001B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J552 Abstract: J3510 j528 ultrarf J5-28 UPB1001B J418 J351 Text: URFDB Sec 03_1001B 11/3/99 10:17 AM Page 3-1 UPB1001B 1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 1W, it is ideal for CDMA, TDMA, GSM, FM,	Original	PDF	1001B UPB1001B 30dBc 140mA 100oC 175oC J552 J3510 j528 ultrarf J5-28 UPB1001B J418 J351

Catalog Datasheet

MFG & Type

PDF

Document Tags

J552

Abstract: J3510 j528 ultrarf J5-28 UPB1001B J418 J351
Text: URFDB Sec 03_1001B 11/3/99 10:17 AM Page 3-1 UPB1001B 1W, 1GHz, 26V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 1W, it is ideal for CDMA, TDMA, GSM, FM,

Original

PDF

1001B UPB1001B 30dBc 140mA 100oC 175oC J552 J3510 j528 ultrarf J5-28 UPB1001B J418 J351