Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A7 Silicon PNP epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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UNR31A7
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A7 Silicon PNP epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 5° 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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2002/95/EC)
UNR31A7
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UNR31A7
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR31A7 Silicon PNP epitaxial planar type Unit: mm For digital circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 2 0.40 (0.40) 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C 1.20±0.05 0.80±0.05 1 0.23+0.05
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UNR31A7
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UNR31A7G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A7G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Suitable for high-density mounting downsizing of the equipment
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UNR31A7
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A7 Silicon PNP epitaxial planar type Unit: mm For digital circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 0.80±0.05 1.20±0.05 • Absolute Maximum Ratings Ta = 25°C
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NP041A7
Abstract: UNR31A7
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A7 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 0 to 0.02 2 3 (0.35) (0.35) 1.00±0.05 UNR31A7 x 2 Display at No.1 lead
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A7 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 (0.35) (0.35) 1.00±0.05 UNR31A7 x 2 Display at No.1 lead +0.03
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TRANSISTOR MARKING ue
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A7 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 1 Basic Part Number 2 0.10 3 (0.35) (0.35) 1.00±0.05 UNR31A7 x 2
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NP041A7
UNR31A7
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A7 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 (0.35) (0.35) 1.00±0.05 UNR31A7 x 2 Display at No.1 lead +0.03
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NP041A7
Abstract: UNR31A7
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP041A7 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 1.00±0.05 UNR31A7 x 2 0.10 1.00±0.04 3 (0.35) (0.35) 0.10 1
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UNR31A7
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A7G Silicon PNP epitaxial planar type For digital circuits • Features ■ Package • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption
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2002/95/EC)
UNR31A7G
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NP041A7
Abstract: UNR31A7
Text: Composite Transistors NP041A7 Silicon PNP epitaxial planar type For digital circuit Unit: mm • Features +0.03 0.12 -0.02 4 2 3 0.35 (0.35) 1.00±0.05 UNR31A7 x 2 Display at No.1 lead +0.03 (0.10) 0.37 -0.02 Absolute Maximum Ratings Ta = 25°C
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NP041A7
UNR31A7
NP041A7
UNR31A7
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UNR31A7G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR31A7G Silicon PNP epitaxial planar type For digital circuits • Package • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption
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2002/95/EC)
UNR31A7G
UNR31A7G
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UNR31AB
Abstract: matsushita pnp UNR31A1 UNR31A2 UNR31A4 UNR31AD UNR31AE UNR31AM UNR31AN UNR31AT
Text: Sheet No. 1/6 DESIGNED CHECKED CHECKED APPROVED inaiMfê/Product Specification m ^ / T y p e Number: U N R 3 Q [ Ä ] [ [ ] o o [ l ] 1 1) 1) M 1) ~fz^OA£MXK v U D y V-y yi/7^9 /Si 1icon Transistors ÍSE'J/Type ffliË/AppI icat ion ífliíl/Structure °]S£ffl/Digital Circuit
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OCR Scan
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UNR31AÃ
UNR32A
UNR31AB
matsushita pnp
UNR31A1
UNR31A2
UNR31A4
UNR31AD
UNR31AE
UNR31AM
UNR31AN
UNR31AT
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PDF
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