UN1114
Abstract: UNR1114 XN01114 XN1114
Text: Composite Transistors XN01114 XN1114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1114(UN1114) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01114
XN1114)
UNR1114
UN1114)
UN1114
XN01114
XN1114
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UN1114
Abstract: UNR1114 XP01114 XP1114
Text: Composite Transistors XP01114 XP1114 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1114(UN1114) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01114
XP1114)
UNR1114
UN1114)
UN1114
XP01114
XP1114
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UN1114
Abstract: UNR1114 XP06114 XP6114 TR123
Text: Composite Transistors XP06114 XP6114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1114(UN1114) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter
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XP06114
XP6114)
UNR1114
UN1114)
UN1114
XP06114
XP6114
TR123
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP03390 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 0.20±0.05 5 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 • Basic Part Number of Element • UNR1213 (UN1213) + UNR1114 (UN1114) 0.9±0.1
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XP03390
UNR1213
UN1213)
UNR1114
UN1114)
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UN1114
Abstract: UNR1114 XP04114 XP4114
Text: Composite Transistors XP04114 XP4114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1114(UN1114) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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XP04114
XP4114)
UNR1114
UN1114)
UN1114
XP04114
XP4114
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UNR1114
Abstract: UNR1213 UP03390
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.05 1.20±0.05 1 2 3 (0.50) (0.50) 1.00±0.05 5˚ (0.20)
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2002/95/EC)
UP03390
UNR1114
UNR1213
UP03390
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UNR1114
Abstract: UNR1213 UP03390
Text: Composite Transistors UP03390 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor)
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UP03390
UNR1114
UNR1213
UNR1114
UNR1213
UP03390
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR111x
UN111x
UNR1110
UNR1111
UNR1112
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UN1114
Abstract: UN1214 UNR1114 UNR1214 XN04314 XN4314
Text: Composite Transistors XN04314 XN4314 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage VCBO 50 V Collector to emitter voltage
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XN04314
XN4314)
UN1114
UN1214
UNR1114
UNR1214
XN04314
XN4314
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UNR1114
Abstract: UNR1213 UP03390G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP03390G
UNR1114
UNR1213
UNR1114
UNR1213
UP03390G
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UNR1114
Abstract: UNR1213 UP03390G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP03390G
UNR1114
UNR1213
UP03390G
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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XP04114
Abstract: XP4114 UN1114 UNR1114
Text: Composite Transistors XP04114 XP4114 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP04114
XP4114)
UNR1114
UN1114)
XP04114
XP4114
UN1114
|
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
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2002/95/EC)
UP04390
UNR1114
UNR1213
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UNR1114
Abstract: UNR1213 UP04390
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage
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2002/95/EC)
UP04390
UNR1114
UNR1213
UP04390
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UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP03390G
UNR1114
UNR1213
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UN1114
Abstract: UNR1114 XP01114 XP1114
Text: Composite Transistors XP01114 XP1114 Silicon PNP epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP01114
XP1114)
UNR1114
UN1114)
50nductor
UN1114
XP01114
XP1114
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) 5˚ di p Pl lan nclu ea
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2002/95/EC)
UP03390
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 M Di ain sc te on na tin nc ue e/ d • Features ■ Basic Part Number Rating Unit
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2002/95/EC)
UP04390
|
UNR1114
Abstract: UNR1213 UP04390
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
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2002/95/EC)
UP04390
UNR1114
UNR1213
UP04390
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Features Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP03390G
UNR1114
UNR1213
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