Untitled
Abstract: No abstract text available
Text: SF0610 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current6.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time450n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)6.0
|
Original
|
SF0610
Time450n
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N5420US Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time450n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)9.0
|
Original
|
1N5420US
Voltage600
Time450n
Current20
StyleDO-213AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYV25-800R Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current40 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time450n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.2 @I(FM) (A) (Test Condition)150
|
Original
|
BYV25-800R
Current40
Voltage800
Time450n
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYV25-1000R Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current40 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time450n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)30
|
Original
|
BYV25-1000R
Current40
Time450n
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MDF150A20L Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time450n @I(F) (A) (Test Condition)2.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)470
|
Original
|
MDF150A20L
Current150
Voltage200
Time450n
Current50m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYV25-1000 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current40 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time450n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)30
|
Original
|
BYV25-1000
Current40
Time450n
|
PDF
|
BYV25
Abstract: No abstract text available
Text: BYV25-800 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current40 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time450n @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.2 @I(FM) (A) (Test Condition)150
|
Original
|
BYV25-800
Current40
Voltage800
Time450n
BYV25
|
PDF
|
la 76805 volt on pin
Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Text: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4
|
OCR Scan
|
MCS-4/40â
MCS-48â
MCS-80/85â
-883B
la 76805 volt on pin
intel 8708 eprom
M3002
Pulse M3001
eprom 8708
2316a rom
UPP-103
interfacing 8275 crt controller with 8086
intel 1402a
Pascall
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N3715+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
2N3715
Freq30k
time450nÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N3716 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
2N3716
Freq30k
time450nÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N3716+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
2N3716
Freq30k
time450nÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJF127 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100öè V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k
|
Original
|
MJF127
time450nÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N3716+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
2N3716
Freq30k
time450nÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N3715+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
2N3715
Freq30k
time450nÃ
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 2N3715+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
2N3715
Freq30k
time450nÃ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT25GF100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)25 Absolute Max. Power Diss. (W)147 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case850m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt.
|
Original
|
APT25GF100BN
Junc-Case850m
delay40n
time130n
time450n
|
PDF
|