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    Abstract: No abstract text available
    Text: RA202225XX00 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.5k V(RRM)(V) Rep.Pk.Rev. Voltage2.2k t(rr) Max.(s) Rev.Rec. Time25u @I(F) (A) (Test Condition)1.5k @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.7


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    PDF RA202225XX00 Time25u Current50m StyleDisc-100

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    Abstract: No abstract text available
    Text: 2N379 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)100þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0


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    PDF 2N379 time25uÃ

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    Abstract: No abstract text available
    Text: 2N2728 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)5.0 V(BR)CBO (V)15 I(C) Max. (A)50 Absolute Max. Power Diss. (W)170 Maximum Operating Temp (øC)125# I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N2728 time25u StyleTO-36