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    TPCP8507 Price and Stock

    Toshiba America Electronic Components TPCP8507(TE85L,F)

    Trans GP BJT NPN 120V 1A 8-Pin PS T/R
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    Verical TPCP8507(TE85L,F) 3,000 148
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    • 1000 $0.16
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    Chip1Stop TPCP8507(TE85L,F) Cut Tape 3,000
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    • 100 $0.174
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    TPCP8507 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPCP8507 Toshiba High-Speed Switching Applications DC/DC Converters Original PDF

    TPCP8507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPCP8507

    Abstract: No abstract text available
    Text: TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mm DC/DC Converters 0.33±0.05 0.05 M A High DC current gain: hFE = 120～300 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)


    Original     		PDF TPCP8507 TPCP8507

    Untitled

    Abstract: No abstract text available
    Text: TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mm DC/DC Converters 0.33±0.05 0.05 M A High DC current gain: hFE = 120~300 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)


    Original     		PDF TPCP8507

    Untitled

    Abstract: No abstract text available
    Text: TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mm DC/DC Converters • High DC current gain : hFE = 120~300 IC = 0.1 A • Low collector-emitter saturation voltage : VCE(sat) = 0.14 V (max) • High-speed switching : tf = 0.2 µs (typ.)


    Original     		PDF TPCP8507

    TPCP8507

    Abstract: No abstract text available
    Text: TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mm DC/DC Converters 0.33±0.05 0.05 M A High DC current gain: hFE = 120~300 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)


    Original     		PDF TPCP8507 TPCP8507

    Untitled

    Abstract: No abstract text available
    Text: TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mm DC/DC Converters 0.33±0.05 0.05 M A High DC current gain: hFE = 120~300 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)


    Original     		PDF TPCP8507

    TPCP8507

    Abstract: No abstract text available
    Text: TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications Unit: mm DC/DC Converters 0.33±0.05 0.05 M A High DC current gain: hFE = 120~300 IC = 0.1 A • Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)


    Original     		PDF TPCP8507 TPCP8507

    TPCP8507

    Abstract: 23-V1
    Text: TPCP8507 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 TPCP8507 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。:hFE = 120～300 (IC = 0.1A) • コレクタ・エミッタ間飽和電圧が低い。:VCE(sat) = 0.14 V (最大)


    Original     		PDF TPCP8507 645mm2 645mm2) 100ms* TPCP8507 23-V1

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		PDF SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SC6087

    Abstract: DC24V TK40P03M1 TK40P04M1 TK50P03M1 TK50P04M1 TK40P03M UMOS TK40P04M
    Text: 3 eye 東芝半導体情報誌アイ 2009 年 3 月号 Volume 199 CONTENTS 新製品情報 同期整流DC/DCコンバータ用最新世代パワーMOSFET 30V Nch D-PAKパッケージシリーズ：TK50P03M1TK40P03M1 液晶テレビ バックライトインバータ用最新世代パワーMOSFET


    Original     		PDF D-PAKTK50P03M1 TK40P03M1 D-PAKTK50P04M1 TK40P04M1 TPCP8510 27MAX 2SC6087 DC24V TK40P03M1 TK40P04M1 TK50P03M1 TK50P04M1 TK40P03M UMOS TK40P04M

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Text: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		PDF SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    DC24V

    Abstract: TK40P03M1 TK40P04M1 TK50P03M1 TK50P04M1 2sc606 TK40P03M TJ20A10M3
    Text: 3 eye 東芝半導体情報誌アイ 2009 年 3 月号 Volume 199 CONTENTS 新製品情報 同期整流DC/DCコンバータ用最新世代パワーMOSFET 30V Nch D-PAKパッケージシリーズ：TK50P03M1TK40P03M1 液晶テレビ バックライトインバータ用最新世代パワーMOSFET


    Original     		PDF D-PAKTK50P03M1 TK40P03M1 D-PAKTK50P04M1 TK40P04M1 TPCP8510 27MAX DC24V TK40P03M1 TK40P04M1 TK50P03M1 TK50P04M1 2sc606 TK40P03M TJ20A10M3

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322