TP55N Search Results

10EL fet

Contextual Info: MOTOROLA O rder this docum ent by M TP55N10EL/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TP55N10EL TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T h is a d va n ce d T M O S E -F E T is d e s ig n e d to w ith s ta n d high

TP55N

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TP55N06Z TM O S E -FE T P ow er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM O S PO W ER FET This ad v a n c e d high vo lta g e TM O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.

STP55N05L

Abstract: TP55N stp55n05 STP55N05LFI
Contextual Info: £jï TP55N05L TP55N05LFI SGS-THOMSON ULKgraMOeS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TP55N 05L TP55N 05LFI V dss RDS on Id 50 V 50 V < 0 .0 2 3 Q. < 0 .0 2 3 Q. 55 A 30 A TYPICAL R D S (on) = 0.02 £2 . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ TP55NE06 TP55NE06FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYP E V S TP55N E06 TP55N E06FP dss 60 V 60 V R d S ( o ii) Id < 0.022 Q. < 0.022 Q. 55 A 30 A . TYPICAL Ros(on) =0.019 £2

STP55N06

Abstract: BS103 TRANSISTOR BH RW r5541
Contextual Info: TP55N06 TP55N06FI SGS-THOMSON * t iLiCcM [MO gS J N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TP55N 06 S TP 55N 06FI . . . . . . . . . dss 60 V 60 V R D S (o n Id 0 .0 2 3 £2 0 .0 2 3 « 55 A 30 A AVALANC HE RUG G EDN ESS TECHNO LO GY

Contextual Info: 7^5^237 D0MbS32 72fl « S Ê T H SGS-THOMSON ¡¡n TP55N06L TP55N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TP 55N 06L TP55N 06LFI V dss R dS oii Id 60 V 60 V < 0 .0 2 3 f i < 0 .0 2 3 55 A 30 A n • TYPICAL RDS(on) = 0.02 Q

TP55N

Contextual Info: MOTOROLA Order this document by TP55N06Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information TP55N06Z TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced high vo ltag e TMOS E -F E T is designed to withstand high energy in the avalanche mode and switch efficiently.

lenovo

Abstract: ic 3207 gp lenovo battery 1r33 PMH7 sot23-6 aa9 foxconn VCC1R05B CC42 lenovo r60
Contextual Info: 5 4 3 THERMAL SENSEER 2 1 CLK GEN YONAH uFCPGA 478PIN PAGE 5 PAGE 2 PAGE 3,4 AGTL+ FSB_533/667MHz 4X Data 2X Address D D VCC3M/VCC5M MAX1901 PAGE 41 LVDS SO-DIMM DRAM DIMMS*2 Dual Channel DDR2 533/667MHz PAGE 10 LCD PAGE 15 CALISTOGA 2R5M/1R2AUX (MAX8563)

7N90FI

Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
Contextual Info: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0

Contextual Info: 55 06 55 06 SGS-THOMSON £ j ï STP N L STP N LFI ULKgraMOeS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E TP55N06L TP55N06LFI V dss RDS on Id 60 V 60 V < 0 . 0 2 3 Q. < 0 . 0 2 3 Q. 55 A 30 A TYPICAL R D S (on) = 0.02 £2 . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: 55 06 55 06 8 SGS-THOMSON iMnei ii@iiLiero iKines STP NE L STP NE LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYP E TP55N E06L S TP 55N E06LFP V dss R D S on Id 60 V 60 V < 0.022 Q. < 0.022 Q. 55 A 28 A . . TYPICAL RDs(on) = 0.018