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    Diodes Incorporated ZXTP25040DFHTA

    TRANS PNP 40V 3A SOT23-3
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    Diodes Incorporated ZXTP25020CFHTA

    TRANS PNP 20V 4A SOT23-3
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    DigiKey ZXTP25020CFHTA Reel 33,000 3,000
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    Diodes Incorporated ZXTP25020DFLTA

    TRANS PNP 20V 1.5A SOT23-3
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    DigiKey ZXTP25020DFLTA Reel 6,000 3,000
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    Mouser Electronics ZXTP25020DFLTA 11,060
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    Newark ZXTP25020DFLTA Cut Tape 696 5
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    Bourns Inc ACTP250J1BJR-S

    THYRISTOR 190V DO214AA
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    DigiKey ACTP250J1BJR-S Cut Tape 5,985 1
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    Newark ACTP250J1BJR-S Cut Tape 8,888 1
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    Diodes Incorporated ZXTP25020BFHTA

    TRANS PNP 20V 4A SOT23-3
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    DigiKey ZXTP25020BFHTA Reel 3,000 3,000
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    Avnet Americas ZXTP25020BFHTA Reel 26 Weeks 3,000
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    Newark ZXTP25020BFHTA Cut Tape 3,000 1
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    Avnet Silica ZXTP25020BFHTA 3,000 28 Weeks 3,000
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    TP250 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TP250 Total Power International 1.5 WATT and DUAL OUTPUT DC-DC CONVERTERS Scan PDF
    TP2502 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2502 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2502N8 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2502N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 0.63A SOT89-3 Original PDF
    TP2502ND Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2502ND Supertex P-Channel Enhacement Mode Vertical DMOS FETs Scan PDF
    TP2503 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TP2503 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    TP2504N8 Supertex P-Channel Enhacement Mode Vertical DMOS FETs Scan PDF
    TP2504ND Supertex P-Channel Enhacement Mode Vertical DMOS FETs Scan PDF

    TP250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TP2502N8 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)370m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)550m Minimum Operating Temp (øC)-55


    Original
    PDF TP2502N8 Junc-Case227

    tp5l

    Abstract: marking code TP5L TP2502 TP2502N8 TP2502ND
    Text: TP2502 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† -20V 2.0Ω -2.4V -2.0A TP2502N8 TP2502ND * Same as SOT-89. † Order Number / Package BVDSS / Product supplied on 2000 piece carrier tape reels.


    Original
    PDF TP2502 O-243AA* TP2502N8 TP2502ND OT-89. O-243AA 125pF tp5l marking code TP5L TP2502 TP2502N8 TP2502ND

    TP5L

    Abstract: No abstract text available
    Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    PDF TP2502 125pF TP2502 O-243AA OT-89) O-243, DSFP-TP2502 A122707 TP5L

    tp5lw

    Abstract: TP2502 TP2502ND
    Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    PDF TP2502 125pF DSFP-TP2502 A022309 tp5lw TP2502 TP2502ND

    Untitled

    Abstract: No abstract text available
    Text: TP2502 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)800m Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original
    PDF TP2502

    TP2502

    Abstract: No abstract text available
    Text: Supertex inc. TP2502 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2502 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    PDF TP2502 TP2502 A031610

    TP2506

    Abstract: TP2510ND TO-243AA TP2510 TP2510N8 P024 TP2506ND
    Text: TP2506/TP2510 TP2506 TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Dice† -60V 3.5Ω -2.4V -1.5A — TP2506ND -100V 3.5Ω -2.4V


    Original
    PDF TP2506/TP2510 TP2506 TP2510 O-243AA* TP2506ND -100V TP2510N8 TP2510ND OT-89. TP2506 TP2510ND TO-243AA TP2510 TP2510N8 P024 TP2506ND

    TP2502

    Abstract: No abstract text available
    Text: TP2502 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2502 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TP2502 TP2502 A020309

    Untitled

    Abstract: No abstract text available
    Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    PDF TP2502 125pF DSFP-TP2502 A022309

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TP2502 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original
    PDF TP2502 125pF DSFP-TP2502 B081413

    TP5L

    Abstract: MARKING CODE BV sot-89 marking code sot-89 AA
    Text: TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original
    PDF TP2502 125pF DSFP-TP2502 A091408 TP5L MARKING CODE BV sot-89 marking code sot-89 AA

    TP2502

    Abstract: TP2502N8 TP2502ND
    Text: TP2502 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† -20V 2.0Ω -2.4V -2.0A TP2502N8 TP2502ND * Same as SOT-89. † Order Number / Package BVDSS /


    Original
    PDF TP2502 O-243AA* TP2502N8 TP2502ND OT-89. TP2502 TP2502N8 TP2502ND

    Untitled

    Abstract: No abstract text available
    Text: TP2506 Supertex inc. t p 2si o Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^D S O N b v dos -60V -100 V Order Number / Package (max) Vos<th) (max) (min) TO-243AA* Dice* 3.5£2 -2.4V -1.5A — TP2506ND 3.512


    OCR Scan
    PDF TP2506 O-243AA* TP2510N8 TP2506ND TP2510ND /TP25'

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc. TP2502 TP2504 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^D S O N ^G S(th) *D(ON) BV jjgs (max) (max) (min) -20V 2.0C1 -2.4V -40V 2.0£2 -2.4V Order Number / Package TO-243AA* DICE*


    OCR Scan
    PDF TP2502 TP2504 O-243AA* TP2504N8 TP2502ND TP2504ND TP2502/TP2504

    Untitled

    Abstract: No abstract text available
    Text: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A


    OCR Scan
    PDF -100V O-243AA* TP2506ND TP2510ND TP2S10N8 OT-89. TP25A

    Untitled

    Abstract: No abstract text available
    Text: TP2502 LowThreshold Supertex inc. Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -20V 2.0Q. -2.4V -2.0 A TP2502N8 TP2502ND * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels.


    OCR Scan
    PDF TP2502 O-243AA* TP2502N8 TP2502ND 125pF

    br A 708

    Abstract: No abstract text available
    Text: I 1EE D MOTOROLA b3b?2S4 0000240 MO T O R C L A SC S E M IC O N D U C T O R I S r-33-£>7 XSTRS/R F TECHNICAL DATA TP2505 TP2505S A dvance Inform ation The RF Line UHF Power Transistors 5 W — 470 M H z UHF PO W ER T R A N S IS T O R S The TP2505/S are designed for 12.5 V U H F amplifiers. Their construction which incor­


    OCR Scan
    PDF r-33-£ TP2505 TP2505S TP2505/S br A 708

    ah2ah

    Abstract: 16-Wt
    Text: TP2502 Supertexinc. Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(lh) *D(ON) BV dgs (max) (max) (min) TO-243AA* Diet -20V 2 ,oa -2.4V -2.0A TP2502N8 TP2502ND * Sam e as SOT-89. Product supplied on 2000 piece carrier tape reels.


    OCR Scan
    PDF TP2502 O-243AA* TP2502N8 TP2502ND OT-89. 125pFmax. TP2502 ah2ah 16-Wt

    TP2504N8

    Abstract: A773 A773* Transistor P024 TP2502 TP2502ND TP2504ND 43AA
    Text: S u p e r te x in c TP2502 TP2504 . Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V oss/ R d S<ON ^ G S ith ) B V dgs max) (m ax) -20V 2.0Q -2.4V -40V 2.0CÌ -2.4V W n) (min) Order Num ber / Package TO-243AA*


    OCR Scan
    PDF TP2502 TP2504 O-243AA* TP2502ND TP2504N8 TP2504ND OT-89. 000451b A773 A773* Transistor P024 TP2502ND TP2504ND 43AA

    p023 diode

    Abstract: No abstract text available
    Text: ^ ^ Si i I r ^ zj r* r TP2506 TP2510 Low Thrash o B 1[ i r * , •mimimu . .immilli _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA*


    OCR Scan
    PDF TP2506 TP2510 O-243AA* TP2510N8 TP2506ND TP2510ND -100V TP2506/TP2510 p023 diode

    Untitled

    Abstract: No abstract text available
    Text: TP2502 hm. tp 2504 I n w T h rftg h n lrB l Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min) TO-243AA* DICE+ -20V 2.0Q -2.4V -2.0A — TP2502ND


    OCR Scan
    PDF TP2502 O-243AA* TP2504N8 TP2502ND TP2504ND TP2502/TP2504

    TP2503

    Abstract: ARCO 425
    Text: 1EE D I b3fe,7SS4 000023? 5 | MO TOROLA SC MOTOROLA T-ïl-oj XSTRS/R F SEM ICO NDUCTOR fl TECHNICAL DATA TP2503 The RF Line N P N S ilic o n U H F P o w e r T ra n sisto r 5 W - 470 MHz UHF POWER T RAN SIST O R . designed for 12.5 V VH F and UH F amplifiers. High gain at reduced voltage and use of


    OCR Scan
    PDF TP2503 TP2503 iF/35 ARCO 425

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA TP2502 The RF Line UHF Power Transistor 2 W — 470 M H z UHF PO W ER T R A N S IS T O R N P N SILICO N . . . d e s ig n e d f o r U H F l a r g e - s i g n a l a m p l if i e r a p p l i c a t i o n s in in d u s t r ia l a n d c o m m e r c i a l F M


    OCR Scan
    PDF TP2502

    Untitled

    Abstract: No abstract text available
    Text: TP25L 0 Supertex me. Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss / R DS ON) V GS(th) W BVdgs (max) (max) (min) TO-243AA* DICEt -20V 2.0£2 -2.4V -2.0A TP2502N8 TP2502ND n) * Same as SOT-89,


    OCR Scan
    PDF TP25L O-243AA* TP2502N8 TP2502ND OT-89, -250mA 300ns