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    diode 400V 4A

    Abstract: TN2635 TN2635N3 TN2635ND TN2640 TN2640LG TN2640N3 TN2640ND
    Text: TN2635/TN2640 TN2635 TN2640 Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) 350V 5.0Ω 2.0V 400V 5.0Ω 2.0V Order Number / Package SO-8 TO-92 DICE†


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    TN2635/TN2640 TN2635 TN2640 TN2635N3 TN2635ND TN2640LG TN2640N3 TN2640ND 500mA 150mA diode 400V 4A TN2635 TN2635N3 TN2635ND TN2640 TN2640LG TN2640N3 TN2640ND PDF

    TN2635N3

    Abstract: No abstract text available
    Text: TN2635N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)0.4 @Temp (øC)150 IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55


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    TN2635N3 Junc-Case170 PDF

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


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    2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex PDF

    HV50530PG

    Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
    Text: SUPERTEX INC - OBSOLETE PRODUCT LISTING [JANUARY 2011] Obsolete Part Number 2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G DN2635N3 DN2640N3 HV110K4-G HV111K4 HV1516P HV1616P HV1616PJ HV1816P HV1816PJ HV20220GA HV20220P


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    2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G HV50530PG hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2635 TN2640 tìfk Super te x inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss/ Order Number / Package R DS ON VGS(th) ' d (ON) (max) (m ax) (miri) SO-8 TO-92 DICE* 350V 5.0Q 2.0V 2.0A - TN2635N3 TN2635ND


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    TN2635 TN2640 TN2635N3 TN2635ND TN2640LG TN2640N3 TN2640ND 100mA 500mA 300ps PDF

    TN2635N3

    Abstract: No abstract text available
    Text: TN26D inc. Ti ü t j h i i ü i d Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVD3S/ R d S ON V OS(th) ' d (ON) BVpos (max) (max) (min) TO-92 DICE* 350V 5.0Q 2.0V 2.0A TN2635N3 TN2635ND 400V 5.0Q 2.0V


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    TN26D TN2635N3 TN2640N3 TN2635ND TN2640ND 150mA 500mA 500mA 100mA 300ns PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2635 TN2640 Low Threshold Prelim inary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ Order Number / Package ^GS th I d (ON) BVdgs (max) (max) (min) SO-8 TO-92 DICE+ 350V 5.0Q 2.0V 2.0A - TN2635N3 TN2635ND 400V 5.0Q 2.0V 2.0A


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    TN2635 TN2640 TN2640LG TN2635N3 TN2640N3 TN2635ND TN2640ND 150mA 500mA PDF

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


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    O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89 PDF

    pj 89 diode

    Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
    Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct


    OCR Scan
    OT-23 TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1 -10ack HV9111 HV9112 pj 89 diode HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode PDF