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    TN252 Search Results

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    TN252 Price and Stock

    Microchip Technology Inc TN2524N8-G

    MOSFET N-CH 240V 360MA TO243AA
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    DigiKey TN2524N8-G Digi-Reel 2,260 1
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    TN2524N8-G Cut Tape 2,260 1
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    TN2524N8-G Reel 2,000 2,000
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    Avnet Americas TN2524N8-G Reel 2,000 7 Weeks 2,000
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    Mouser Electronics TN2524N8-G 2,762
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    Verical TN2524N8-G 4,082 8
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    TN2524N8-G 4,000 500
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    TN2524N8-G 2,000 2,000
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    TN2524N8-G 200 41
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    Arrow Electronics TN2524N8-G Cut Strips 4,082 7 Weeks 1
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    TN2524N8-G 2,000 7 Weeks 2,000
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    Newark TN2524N8-G Cut Tape 7,936 1
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    TN2524N8-G Reel 4,000 2,000
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    RS TN2524N8-G Bulk 45 Weeks 2,000
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    Microchip Technology Inc TN2524N8-G Reel 28,898 7 Weeks
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    Onlinecomponents.com TN2524N8-G 4,000
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    TME TN2524N8-G 200 1
    • 1 $1.74
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    Ameya Holding Limited TN2524N8-G 292
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    NAC TN2524N8-G 2,000
    • 1 $0.89
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    Avnet Silica TN2524N8-G 9 Weeks 2,000
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    EBV Elektronik TN2524N8-G 8 Weeks 2,000
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    IBS Electronics TN2524N8-G 2,000
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    Master Electronics TN2524N8-G 4,000
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    Vyrian TN2524N8-G 8,613
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    Microchip Technology Inc TN2524N8-G.

    Mosfet, N-Channel Enhancement-Mode, 240V, 6.0 Ohm Rohs Compliant: Yes |Microchip TN2524N8-G.
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    Newark TN2524N8-G. Reel 2,000 2,000
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    SMC Corporation of America CDG1TN25-250Z

    Air Cylinder, CG1-Z SERIES | SMC Corporation CDG1TN25-250Z
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    RS CDG1TN25-250Z Bulk 5 Weeks 1
    • 1 $76.45
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    SMC Corporation of America RZQL63TN-25-20

    CYLINDER, 3-POSITION, RZQ SERIES | SMC Corporation RZQL63TN-25-20
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    RS RZQL63TN-25-20 Bulk 5 Weeks 1
    • 1 $363.2
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    SMC Corporation of America RZQA40TN-25-20

    CYLINDER, 3-POSITION, RZQ SERIES | SMC Corporation RZQA40TN-25-20
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    RS RZQA40TN-25-20 Bulk 5 Weeks 1
    • 1 $229.31
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    TN252 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN2520N8-G Supertex P-Channel Enhancement Mode Vertical DMOS FETs Original PDF
    TN2524 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2524N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2524N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2524N8-G Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2524ND Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2524ND Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2529 Supertex Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2529K6-G Supertex Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Original PDF

    TN252 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    25SI

    Abstract: No abstract text available
    Text: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Orderina Informâtion RdS ON (max) VûS(th) (max) 240V 6.0ft 2.0V Order Numb e r / Package If BVoss / BVcxss TO-243AA* Diet 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels,


    OCR Scan
    TN2524 O-243AA* TN2524N8 TN2524ND OT-89. 125pF 25SI PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2524 125pF DSFP-TN2524 B111908 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2524 125pF TN2524 O-243AA OT-89) O-243, DSFP-TN2524 B122707 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling


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    TN2524 125pF DSFP-TN2524 B022309 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device


    Original
    TN2529 TN2529 125pF DSFP-TN2529 A091608 PDF

    TN2529

    Abstract: No abstract text available
    Text: TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TN2529 TN2529 A020309 PDF

    TN2524

    Abstract: No abstract text available
    Text: TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    TN2524 TN2524 A020309 PDF

    Untitled

    Abstract: No abstract text available
    Text: T N 25C Ljì Supertex me. L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV0SS / * Order Number / Package ^DS ON V gS(«i ) blONI (max) (max) (min) TO-243AA* DICE 200V 6£i 2.0V 1.0A — TN2520ND 240V 60 2.0 V 1.0A


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    O-243AA* TN2524N8 TN2520ND TN2524ND 250mA 300ms PDF

    TC8220

    Abstract: sot-23 P-Channel MOSFET ultrasound MOSFET SOT-89 SOT-89 TN2524 TN2425 TC1550 TC2320 TC6215
    Text: Selector Guide Ultrasound MOSFETs Ultrasound MOSFETs, Arrays and Drivers Device BVDSS V RDS(ON) (Ω) CISS (typ pF) VGS(TH) (max V) Package Options TN2425 250 3.5 105 0.8 (min) TN2524 240 6.0 65 2.0 3-Lead SOT-89 (N8) TN2640 400 5.0 180 2.0 3-Lead TO-92 (N3)


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    TN2425 TN2524 OT-89 TN2640 OT-23 TN5325 TP2424 TC8220 sot-23 P-Channel MOSFET ultrasound MOSFET SOT-89 SOT-89 TN2524 TN2425 TC1550 TC2320 TC6215 PDF

    125OC

    Abstract: TN2529 TN2529K6-G
    Text: TN2529 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original
    TN2529 TN2529 125pF DSFP-TN2529 NR061107 125OC TN2529K6-G PDF

    tn2520

    Abstract: p-channel 200V TN2524 P024 TN2520ND TN2524N8 TN2524ND
    Text: TN2520/TN2524 TN2520 TN2524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* DICE 200V 6Ω 2.0V 1.0A — TN2520ND 240V 6Ω 2.0V 1.0A TN2524N8


    Original
    TN2520/TN2524 TN2520 TN2524 O-243AA* TN2520ND TN2524N8 TN2524ND OT-89. tn2520 p-channel 200V TN2524 P024 TN2520ND TN2524N8 TN2524ND PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original
    TN2529 125pF DSFP-TN2529 A111407 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2524 125pF TN2524 O-243AA OT-89) O-243, DSFP-TN2524 A101207 PDF

    Untitled

    Abstract: No abstract text available
    Text: T N 25C Lji Supertex inc. L ow T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) BVtcs (max) (max) TO-243AA* DICE 200V 60 2.0V 1.0A — TN2520ND 240V 60 2.0V 1.0A TN2524N8 TN2524ND


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    OT-89. O-243AA* TN2520ND TN2524ND TN2524N8 TN25C PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet 240V 6.0Q. 2.0V 1.0A T N 2524N 8 T N 2524N D * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels,


    OCR Scan
    TN2524 O-243AA* 2524N 125pF PDF

    tn5cw

    Abstract: TN2524 TN5C fet sot-89 marking code mos die TN2524N8-G TN2524ND
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2524 125pF O-243, DSFP-TN2524 A101207 tn5cw TN2524 TN5C fet sot-89 marking code mos die TN2524N8-G TN2524ND PDF

    tn5cw

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2524 125pF DSFP-TN2524 B050108 tn5cw PDF

    125OC

    Abstract: TN2529 TN2529K6-G
    Text: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original
    TN2529 TN2529 125pF DSFP-TN2529 A091608 125OC TN2529K6-G PDF

    kingston sd SPI

    Abstract: RCM4300 sandisk 1Gb sd sd card kingston 1gb kingston sd sd card sandisk 1GB SD CARD Kingston SanDisk sandisk SD
    Text: TN252 Use of miniSD Cards with Rabbit-Based Devices The following miniSD™ Cards were evaluated by Rabbit Semiconductor for use with RCM4300 RabbitCore modules and future Rabbit-based devices that support miniSD™ Cards, and were found to interface correctly with these devices. While other miniSD™ Cards may work correctly with a PC, some cards have


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    TN252 RCM4300 RCM4300. 256MB 512MB kingston sd SPI sandisk 1Gb sd sd card kingston 1gb kingston sd sd card sandisk 1GB SD CARD Kingston SanDisk sandisk SD PDF

    tn5c

    Abstract: TN2524 TN2524N8 TN2524ND marking Tn5C
    Text: TN2524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† 240V 6.0Ω 2.0V 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original
    TN2524 O-243AA* TN2524N8 TN2524ND OT-89. O-243AA 125pF tn5c TN2524 TN2524N8 TN2524ND marking Tn5C PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524N8 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)200m @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55


    Original
    TN2524N8 Junc-Case15 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 2.0V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance


    Original
    TN2524 125pF DSFP-TN2524 C080913 PDF

    TN2529

    Abstract: No abstract text available
    Text: Supertex inc. TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    TN2529 TN2529 A031610 PDF

    TN2524

    Abstract: No abstract text available
    Text: Supertex inc. TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    TN2524 TN2524 A031610 PDF