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    TL160 Search Results

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    TL160 Price and Stock

    TOKO Inc PTL1608-F2N2C

    FIXED IND 2.2NH 650MA 220MOHM SM
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    DigiKey PTL1608-F2N2C Reel 6,000 6,000
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    PTL1608-F2N2C Cut Tape 154 1
    • 1 $0.13
    • 10 $0.131
    • 100 $0.1288
    • 1000 $0.12498
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    NexGen Digital PTL1608-F2N2C 8,486
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    TOKO Inc PTL1608-F1N5C

    FIXED IND 1.5NH 800MA 150 MOHM
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    DigiKey PTL1608-F1N5C Cut Tape 3,248 1
    • 1 $0.13
    • 10 $0.131
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    Bristol Electronics PTL1608-F1N5C 4,382
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    Essentra Components STL-1-600-3-01

    CBL CLIP TWIST LOCK NAT ARROW
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    DigiKey STL-1-600-3-01 Bulk 2,819 1
    • 1 $0.22
    • 10 $0.187
    • 100 $0.1455
    • 1000 $0.10455
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    Mouser Electronics STL-1-600-3-01
    • 1 $0.22
    • 10 $0.189
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    Newark STL-1-600-3-01 Bulk 965 1
    • 1 $0.131
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    RS STL-1-600-3-01 Bulk 19 Weeks 1,000
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    DB Roberts STL-1-600-3-01
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    STL-1-600-3-01
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    TOKO Inc PTL1608-F15NT

    FIXED IND 15NH 200MA 2 OHM SMD
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    DigiKey PTL1608-F15NT Cut Tape 2,096 1
    • 1 $0.12
    • 10 $0.118
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    • 1000 $0.1125
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    Micro Commercial Components MCTL160N15Y-TP

    N-CHANNEL MOSFET, TOLL-8L
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCTL160N15Y-TP Reel 2,000 2,000
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    MCTL160N15Y-TP Cut Tape 1,990 1
    • 1 $5.03
    • 10 $4.225
    • 100 $3.4178
    • 1000 $2.60136
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    Mouser Electronics MCTL160N15Y-TP 1,975
    • 1 $5.03
    • 10 $4.23
    • 100 $3.42
    • 1000 $2.77
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    Find more TL160 price and stock on Findchips.com

    TL160 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TL16000 Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    TL1605800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 16POS TOP ENTRY 5MM PCB Original PDF

    TL160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152

    TLE4998

    Abstract: TLE4998P4 PGSISI TLE4998x
    Text: Application N ote, V 1.0, August 2008 TLE4998 2-Point Calibration Guide Sensors N e v e r s t o p t h i n k i n g . Edition 2008-08 Published by Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany Infineon Technologies AG 2008. All Rights Reserved.


    Original     		PDF TLE4998 TLE4998-2P TLE4998 TLE4998P4 PGSISI TLE4998x

    PGSISI

    Abstract: TLE4997 hall effect interface WITH ADC
    Text: Application Note, V 1.00, December 2007 TLE4997 2-Point Calibration Guide Sensors Edition 2007-12 Published by Infineon Technologies AG 81726 Munich, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF TLE4997 PGSISI TLE4997 hall effect interface WITH ADC

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

    transistor c124

    Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131

    PTFB093608

    Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145

    TL272

    Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O
    Text: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty


    Original     		PDF PTFB201402FC PTFB201402FC H-37248-4 17ubstances. TL272 tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    TL244

    Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 TL244 CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134

    TL250

    Abstract: TL239
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PDF PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    VdS 2093 2009

    Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114
    Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz


    Original     		PDF PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    atc200b104kw50

    Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
    Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147

    Untitled

    Abstract: No abstract text available
    Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,


    Original     		PDF PTFB093608FV PTFB093608FV H-34275G-6/2

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170

    TL306

    Abstract: TL184 TL167 TL307
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 96stances. TL306 TL184 TL167 TL307

    ugn3020 hall effect device

    Abstract: UGN-3040 ugn3040 UGN3019 ugn3020 UGN3040T UGN-3040T QD344S7 UGN3030
    Text: TEXAS INSTR Í L I N / I N T F O SS DEj 0^1754 QD344S7 fi V 8 9 6 1 7 2 4 TEXAS INSTR CLIN/INTFC ~r 34457 T-*^5-05 SERIES TL160 SILICON HALL EFFECT SWITCHES LINEAR INTEGRATED CIRCUITS • 55C D 2 62 0, D EC EM B ER 1983 Magnetic-Field-Senslng Hall-Effect Input


    OCR Scan     		PDF QD344S7 UGN3019, UGN3020, UGN3030, UGN3040 TL160 TL16pply ugn3020 hall effect device UGN-3040 UGN3019 ugn3020 UGN3040T UGN-3040T UGN3030

    TL16C5541

    Abstract: 16C554 TL16C550 TL16C450 TL16C550B TL16C554 TL16C554I
    Text: TL16C554, TL16C554I ASYNCHRONOUS COMMUNICATIONS ELEMENT SLLS165C - JANUARY 1994 - REVISED AUGUST 1996 Integrated Asynchronous Communications Element Consists of Four Improved TL16C550 ACEs Plus Steering Logic In FIFO Mode, Each ACE Transmitter and Receiver Is Buffered With 16-Byte FIFO to


    OCR Scan     		PDF TL16C554, TL16C554I SLLS165C TL16C550 16-Byte TL16C450 16-MHz 4040005/B MS-018 TL16C5541 16C554 TL16C550B TL16C554 TL16C554I

    22CV10AP

    Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610
    Text: Data Book General Information PEEL Arrays PEEL Devices Special Products and Services Development Tools Application Notes and Reports Package Information PLACE Users Manual_ Introduction to PLACE PLACE Installation Getting Started with PLACE Operation Reference Guide


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: C ircuit D e s c r ip t io n 5mm S Type No. SSA021 in g l e T 650 ie r MIN TYP 3.6 6.3 I ndicators Vf Volts m cd LED I Colour Board IfmA TYP 10 2.0 D @ MAX IfmA 3.0 10 O r d e r in g I n f o r m a t io n im e n s io n s / C o n n e c t io n s SSA021X.X


    OCR Scan     		PDF SSA021 SSA021X. SSA218