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    TJ100F06M3L Search Results

    TJ100F06M3L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TJ100F06M3L Toshiba TJ100F06 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TJ100F06M3L Toshiba Japanese - Transistors - Mosfets Original PDF
    TJ100F06M3L Toshiba Transistors - Mosfets Original PDF

    TJ100F06M3L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V)


    Original     		PDF TJ100F06M3L AEC-Q101 O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)


    Original     		PDF TJ100F06M3L O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)


    Original     		PDF TJ100F06M3L O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TJ100F06M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ100F06M3L 1. 用途 • 車載用 • リレー駆動用 • DC-DCコンバータ用 • モータドライブ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 5.6 mΩ (標準) (VGS = -10 V)


    Original     		PDF TJ100F06M3L O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V)


    Original     		PDF TJ100F06M3L O-220SM

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF