Untitled
Abstract: No abstract text available
Text: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended
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TIP3055T
TIP295ST
O-220
bbS3R31
0D3SQ31
003S032
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TR TIP2955
Abstract: 1N914 TIP2955 TIP3055 transistor sr 61 TEXAS INSTRUMENTS in914 N6128 TEXAS TIP2955
Text: TYPE TIP295S P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER AM PLIFIER AND HIGH-SPEED SWITCHING APPLICATIONS RECOMMENDED FOR COMPLEMENTARY USE WITH TIP3055 mechanical data • 90 Watts at 25° C Case Temperature • 15 A Rated Collector Current
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TIP295S
TIP3055
TR TIP2955
1N914
TIP2955
TIP3055
transistor sr 61
TEXAS INSTRUMENTS in914
N6128
TEXAS TIP2955
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tip 420 transistor
Abstract: transistor tip 182 TIP30S5 TIP295S TIP2955 NPN power transistor transistor tip 420 TIP2955 TIP3055 sit transistor
Text: Æ & m o s p e c COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP2955 NPN TIP3055 .designed for use in general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 90W @ Tc = 25°C * DC Current Gain hFE = 20 - 100 @ lc = 4.0 A
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TIP3055
TIP2955
\300us
tip 420 transistor
transistor tip 182
TIP30S5
TIP295S
TIP2955 NPN power transistor
transistor tip 420
TIP2955
sit transistor
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T1P3055
Abstract: t1p29 CSD1047 TIP295 CSD1047Y
Text: r-B OIM A C £ F G H K L M N P C- MIN. 17.75 5.2 3.8 0 1.9 14,50 33.25 20.75 11.50 1.0 18.75 0 .4 0 3.15 5.21 MAX. 18*25 5.7 4.2 0 2.1 15.10 36.75 21.25 12.25 1.30 21.65 0.60 3.45 5.72 1. 2. 3. B A SE CO LLECTO R EM ITTER A LL DIM ENSIO NS A R E IN M.M. TO BE MOUNTED WITH SIUCONE GREASE ON THE BACK SIDE.
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TIP145F
TIP146F
TIP147F
TIP295SF
T1P29SSHVF
TIP305SF
T1P3055HVF
T1P3055
t1p29
CSD1047
TIP295
CSD1047Y
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TIP 2n3055
Abstract: TIP 3055 transistor Amp 3055 of 2n3055 tip 2955 transistor TIP 3055 motorola power transistor 2N3055 M 3055 power transistor 2955 transistor transistor 3055
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA u d ii TIP 3055 Com plem entary Silicon Power Transistors PNP TIP 2955 . . . designed for general-purpose switching and amplifier applications. • • • DC Current Gain — hpg - 2 0 -7 0 @ Iq - 4.0 Adc Collector-Emitter Saturation Voltage — VcE sat " 1 -1 Vc|c (Max) @ Ic = 4.0 Adc
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