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    TH58NYG3S0HBAI6 Search Results

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    TH58NYG3S0HBAI6 Price and Stock

    KIOXIA TH58NYG3S0HBAI6

    IC FLASH 8GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TH58NYG3S0HBAI6 Tray 333 1
    • 1 $9.4
    • 10 $8.647
    • 100 $7.57063
    • 1000 $6.98158
    • 10000 $6.73815
    Buy Now
    Mouser Electronics TH58NYG3S0HBAI6 1,231
    • 1 $9.11
    • 10 $8.39
    • 100 $7.34
    • 1000 $6.77
    • 10000 $6.54
    Buy Now

    TH58NYG3S0HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TH58NYG3S0HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 8G PARALLEL 67VFBGA Original PDF

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    TH58NYG3S0HBAI6

    Abstract: No abstract text available
    Text: TH58NYG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G  8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG3S0HBAI6 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.


    Original
    PDF TH58NYG3S0HBAI6 TH58NYG3S0HBAI6 4096blocks. 4352-byte 2013-09-20C