100C
Abstract: TGA1141
Text: Advance Product Information Feb 4, 2000 33-36 GHz 2W Power Amplifier TGA1141 Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1.5A Primary Applications • Military Radar Systems
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Text: Advance Product Information February 27, 2003 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
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Text: Advance Product Information August 26, 2002 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
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Text: Not Recommended for New Designs Advance Product Information July 23, 2007 TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • • • • • 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB,
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Abstract: No abstract text available
Text: Advance Product Information August 27, 2003 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • • • • • 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB, Psat 33dBm @ 6V , 34dBm @7V Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
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Text: Advance Product Information January 8,2001 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • 0.25 um pHEMT Technology • 17 dB Nominal Gain • 31 dBm Pout @ P1dB, • Psat 33dBm @ 6V , 34dBm @7V • Bias 6 - 7V @ 1.5A Primary Applications • Military Radar Systems
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Text: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier TGA1141 Key Features • • • • • 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB,
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Abstract: TGA1141 TGA4516 ka band power mmic
Text: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier TGA1141 Key Features • • • • • 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB,
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Text: Advance Product Information August 20, 2003 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • • • • • 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB, Psat 33dBm @ 6V , 34dBm @7V Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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