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    TD2N40E Search Results

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    TD2N40E Price and Stock

    Rochester Electronics LLC MTD2N40E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTD2N40E Bulk 919
    • 1 -
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    • 1000 $0.33
    • 10000 $0.33
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    Rochester Electronics LLC MTD2N40ET4

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTD2N40ET4 Bulk 1,480
    • 1 -
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    • 10000 $0.2
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    onsemi MTD2N40E

    Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTD2N40E 3,230 1
    • 1 $0.3142
    • 10 $0.3142
    • 100 $0.2953
    • 1000 $0.2671
    • 10000 $0.2671
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    onsemi MTD2N40ET4

    Power Field-Effect Transistor, N-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTD2N40ET4 137,500 1
    • 1 $0.195
    • 10 $0.195
    • 100 $0.1833
    • 1000 $0.1658
    • 10000 $0.1658
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    ComSIT USA MTD2N40ET4 810
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    Motorola Mobility LLC MTD2N40E

    Trans MOSFET N-CH 400V 2A 3-Pin(2+Tab) DPAK '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTD2N40E 55 1
    • 1 $0.3142
    • 10 $0.3142
    • 100 $0.2953
    • 1000 $0.2671
    • 10000 $0.2671
    Buy Now

    TD2N40E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TD2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2N40E T M O S E -F E T ™ High Energy Pow er FET DPAK for S u rfa ce Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate


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    MTD2N40E/D TD2N40E PDF

    fet dpak

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TD2N40E TMOS E-FET High Energy Power FET DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS on = 3.5 OHM N-Channel Enhancement-Mode Silicon Gate This advan ced high voltage T M O S E -F E T is designed to


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    PDF