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    TCS1200 Price and Stock

    Microchip Technology Inc TCS1200

    RF TRANS NPN 65V 1.03GHZ 55TU-1
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    GEFRAN spa F082192 (ALTERNATE: 3850T-CS-12-00-00-00-00-00-00-0-0)

    Up to 16 PID loops Controller Programmer & Recorder, 7 graphic touch interface | Gefran F082192
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    RS F082192 (ALTERNATE: 3850T-CS-12-00-00-00-00-00-00-0-0) Bulk 1
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    GEFRAN spa F079387 (ALTERNATE: 3850T-CS-12-00-00-GL-GV-00-00-0-0)

    Up to 16 PID loops Controller Programmer & Recorder, 7 graphic touch interface | Gefran F079387
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    RS F079387 (ALTERNATE: 3850T-CS-12-00-00-GL-GV-00-00-0-0) Bulk 1
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    TCS1200 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TCS1200 Microsemi 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz Original PDF
    TCS1200 Microsemi TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 1200; P(in) (W): 150; Gain (dB): 10.2; Vcc (V): 53; Pulse Width ( usec): 32; Duty Cycle (%): 2; Case Style: 55TU-1 Original PDF

    TCS1200 Datasheets Context Search

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    TCS1200

    Abstract: 55TU-1
    Text: TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty


    Original     		PDF TCS1200 55TU-1 TCS1200 55TU-1

    Untitled

    Abstract: No abstract text available
    Text: TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metalization and


    Original     		PDF TCS1200 TCS1200 55TU-1 TemperaturesS1200 1030MHz,

    TCS1200

    Abstract: No abstract text available
    Text: TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metalization and


    Original     		PDF TCS1200 55TU-1 TCS1200

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Untitled

    Abstract: No abstract text available
    Text: D IN = lt'< 7 ^ V$-y ji hOSIDEN b DIN CONNECTORS (Metal Cover Type Sockets) U N IT : mm TCS0200 > U -X /S e rie s TCS0250-01 -1201 TCS1200 > V -X /S e r ie s D IN Sta n d a rd No. 41J24 Num ber o f C o n ta c ts 3 — 4 41524 — 5a 5b WWl Body: 9 4 V -0


    OCR Scan     		PDF TCS0200 TCS0250-01 TCS1200 41J24 S1220-01-1201 S1270-01-6201 S1290-01-1201 TCS1230-01-1101