1SV147
Abstract: RR23 251C TOSHIBA LABLE
Text: TOSHIBA b? {DISCRETE/OPTO} 9097250 TOSHIBA D eTJ TCH755D OOO^bfl □ <D I S C R E T E / O P T O > 67C 09368 Silicon Epitaxial Planar Type " P 7 c o7-/’7 1SV147 Variable Capacitance Diode FM RADIO BAND TUNING APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS Ta=25°C
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TCH755D
1SV147
rr23/
1SV147
RR23
251C
TOSHIBA LABLE
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OP T03- ^ 0 1 7 2 5 0 9097250 TOSHIBA DISCRETE/OPTO ¿/iuhihi 90D SEMICONDUCTOR 16339 DDltaa*! L DT'23'3£ TOSHIBA G-TR MODULE MG75M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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MG75M2CK1
75M2c
TCH755D
DD1L343
r-33-35
0Dlb344
T-33-35'
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TIM5053-4
Abstract: No abstract text available
Text: TIM5053-4 FEATURES: • HIGH POWER PldB = 36.0 dBm at 5.0 GHz to 5.3 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN G-|dB = 9.5 dB at 5.0 GHz to 5.3 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS O u tp u t Power
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TIM5053-4
2-11D1B)
2601C.
TCH7250
TIM5053-4
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