Transistor 75Y
Abstract: No abstract text available
Text: TOSHIBA {DISCRE TE/ OPTO} 9097250 T O S H IB A tfoáftiba. COI S C R E T E /O P T O Ti DE I TCH72SG 99D 16876 □□lbfl7b D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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I1CH725G
0-14ft
l00nA
250uA
250uA
1S-18A
00A/us
Transistor 75Y
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T0T7250
Abstract: hoya Filter ND 0.3
Text: TCD5311BD GENERAL TCD5311BD is an interline CCD area image sensor developed for a PAL/SECAM system Color television camera. This device has signal pixels of 681 horizontal x 582 (vertical), and its image size agrees with 1/2 inch type optical system. This device offers high sensitivity and high resolution,
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TCD5311BD
TCD5311BD
TCH725Q
T0T7250
hoya Filter ND 0.3
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Untitled
Abstract: No abstract text available
Text: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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DISCRETE/OPTOJ9097250
DT-33-3Sâ
MG-20Q6EK1
hFEc100
MG20Q6EK1-1
TCH72SG
DDlb30Ã
iG20Q6F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz
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7785-16L
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