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    TC55V1664 Price and Stock

    Toshiba America Electronic Components TC55V1664BFT-12

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    Bristol Electronics TC55V1664BFT-12 700
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    Quest Components TC55V1664BFT-12 468
    • 1 $7.98
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    TC55V1664BFT-12 18
    • 1 $8.55
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    • 100 $5.7
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    Toshiba America Electronic Components TC55V1664FT-15

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    Bristol Electronics TC55V1664FT-15 575
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    Quest Components TC55V1664FT-15 65
    • 1 $22.86
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    Toshiba America Electronic Components TC55V1664BFT-10

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    Bristol Electronics TC55V1664BFT-10 130
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    Quest Components TC55V1664BFT-10 104
    • 1 $16.47
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    Toshiba America Electronic Components TC55V166413FT-12

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    Bristol Electronics TC55V166413FT-12 68
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    Toshiba America Electronic Components TC55V1664FT-15(H)

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    Bristol Electronics TC55V1664FT-15(H) 40
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    TC55V1664 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55V16648BBFT-10 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16648BBFT-12 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16648BBFT-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16648BJ Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16648BJ-10 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16648BJ-12 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16648BJ-15 Toshiba 65,536-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V1664BFT Toshiba (TC55V1664BJ/BFT) 16-Bit CMOS SRAM Scan PDF
    TC55V1664BFT-10 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC55V1664BFT-10 Toshiba 65,536-word by 16 bit CMOS static RAM, access time 10ns Scan PDF
    TC55V1664BFT-10 Toshiba Scan PDF
    TC55V1664BFT-12 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC55V1664BFT-12 Toshiba 65,536-word by 16 bit CMOS static RAM, access time 12ns Scan PDF
    TC55V1664BFT-12 Toshiba Scan PDF
    TC55V1664BFT-12(YE) Toshiba SRAM Chip, Asynchronous, 1Mbit, SDR, 3.3V Supply, Commercial, TSOP II, 44-Pin, Tape and Reel Scan PDF
    TC55V1664BFT-15 Toshiba 65,536-word by 16 bit CMOS static RAM, access time 15ns Scan PDF
    TC55V1664BFT-8 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC55V1664BFT-8 Toshiba Scan PDF
    TC55V1664BFTI-10 Toshiba 65,536 Word by 16 Bit CMOS Static RAM Scan PDF
    TC55V1664BFTI-10 Toshiba Scan PDF

    TC55V1664 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GS8160Z18BT-150

    Abstract: TC55V16186FF-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 TC55V16256FT-25
    Text: TOSHIBA For Toshiba: Add "I" after package designator for Industrial Temp. For example: the TC55VD818FF-133 becomes the TC55VD818FFI-133 for industrial temp. For GSI: Add "I" at the end of part number for Industrial Temp. TC55V16176FF-150 TC55V16176FF-167


    Original
    PDF TC55VD818FF-133 TC55VD818FFI-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-133 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 GS8160Z18BT-150 TC55V16186FF-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 TC55V16256FT-25

    VOGT n3 503 20 010 50

    Abstract: No abstract text available
    Text: HFC - S active ISDN Microprocessor ARM7 based Preliminary Data Sheet: July 2002 Copyright 1994 - 2002 Cologne Chip AG All Rights Reserved The information presented can not be considered as assured characteristics. Data can change without notice. Parts of the information presented may be protected by patent or other rights.


    Original
    PDF

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original
    PDF TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan
    PDF TC55V1664J/FT-10/12/15 TC55V1664J/FT TC55V-: 664J/FT TC55V1 B-135

    bft10

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TC55V1664BJ/BFT-10,-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-400-1 44-P-400-0 bft10

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V1664J-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664J-12 536-WORD 16-BIT TC55V1664J 576-bit SOJ44-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664BJ/BFT-1Q,-12 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A TE C M O S 65,536-W ORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as


    OCR Scan
    PDF TC55V1664BJ/BFT-1Q 16-BIT TC55V1664BJ/BFT 10172M7 TC55V1664BJ/BFT-10

    IJ09

    Abstract: SOJ44-P-400-1 A120T1
    Text: TO SH IBA TEN TATIVE TC55V1664BJI/BFTI-10,-12 TO SHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJI/BFTI is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJI/BFTI-10 536-WORD 16-BIT TC55V1664BJI/BFTI SOJ44-P-4QO-1 44-P-400-0 IJ09 SOJ44-P-400-1 A120T1

    TC55V1664FT-12

    Abstract: TC55V1664FT-13 TC55V1664FT-15
    Text: TOSHIBA TC55V1664FT-12,-13,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664FT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664FT-12 536-WORD 16-BIT TC55V1664FT 576-bit 44-P-400-0 TC55V1664FT-13 TC55V1664FT-15

    SOJ44-P-400-1

    Abstract: TC55V1664BFT
    Text: TOSHIBA TC55V1664BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1 TC55V1664BFT

    I03c

    Abstract: SOJ44-P-400-1 TC55V1664BFT
    Text: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJ/BFT-8 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 I03c SOJ44-P-400-1 TC55V1664BFT

    Untitled

    Abstract: No abstract text available
    Text: TC55V1664J-12,-15 TO SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664J-12 TC55V1664J 576-bit TC55V1664) SOJ44-P-400-1

    55V1664

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664FT-12,-13,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664FT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664FT-12 536-WORD 16-BIT TC55V1664FT 576-bit TSOPII44-P-400-0 55V1664FT-12 55V1664

    SOJ44-P-400-1

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664BJI/BFTI-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJI/BFTI is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJI/BFTI-10 536-WORD 16-BIT TC55V1664BJI/BFTI SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1

    l2a14

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT - 1 2 , TC55V1664J/FT - 1 5 TECHNICAL DATA ! SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J/FT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bit« using CMOS technology, and operated from a single 3.3-volt supply. Toshiba’s CMOS


    OCR Scan
    PDF TC55V1664J/FT SOJ44 TC55V1664J/FT--> TC55V1664J/FT-12, l2a14

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC55V1664BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-400-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC55V1664 FT - 12 TC55V1664 FT - 13 TC55V1664 F T - 15 SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664FT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


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    PDF TC55V1664 536-WORD 16-BIT TC55V1664FT 576-bit TC55V1664FTâ

    SOJ44-P-400-1

    Abstract: A1400 TC55V1664BFT
    Text: TOSHIBA TENTATIVE TC55V1664BJ/BFT-10#-12#-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1 A1400 TC55V1664BFT

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC55V1664J-12 TC55V1664J-15 SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536


    OCR Scan
    PDF TC55V1664J-12 TC55V1664J-15 536-WORD 16-BIT TC55V1664J 576-bit TC55V1664J SOJ44-P-400)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664FT-12,-13,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664FT is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664FT-12 536-WORD 16-BIT TC55V1664FT 576-bit 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan
    PDF TC55V1664J/FT-10/12/15 TC55V1664J/FT TC55aranteed 002b424 B-135

    TC55V1664J-15

    Abstract: SOJ44-P-400-1 TC55V1664J-12
    Text: TC55V1664J-12,-15 TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664J is a 1,048,576-bit high-speed static random access memory SRAM organized as 65,536 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed


    OCR Scan
    PDF TC55V1664J-12 536-WORD 16-BIT TC55V1664J 576-bit SOJ44-P-4QO-1 TC55V1664J-15 SOJ44-P-400-1

    SOJ44-P-400-1

    Abstract: TC55V1664BFT
    Text: TOSHIBA TC55V1664BJ/BFT-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJ/BFT-10 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1 TC55V1664BFT

    SOJ44-P-400-1

    Abstract: TC55V1664BFT SOJ44-P-4QO-1 i2124
    Text: TOSHIBA TC55V1664BJ/BFT-8 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V1664BJ/BFT is a 1,048,576 bits high speed static random access memory organized as 65,536 words by 16 bits using CMOS technology, and operated from a single 3.3V supply. Toshiba’s


    OCR Scan
    PDF TC55V1664BJ/BFT-8 536-WORD 16-BIT TC55V1664BJ/BFT SOJ44-P-4QO-1 44-P-400-0 SOJ44-P-400-1 TC55V1664BFT i2124