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    Bristol Electronics TC5565AFL-12L 805
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    TC5565AFL-12 32
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    Bristol Electronics TC5565APL-15 82
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    TC5565A Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC5565AFL-10 Toshiba 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology Original PDF
    TC5565AFL-10 Toshiba 8,192 WORD x 8 BIT CMOS STATIC RAM Scan PDF
    TC5565AFL-10 Toshiba Vintage Memory Datasheet Scan PDF
    TC5565AFL-10 Toshiba Toshiba Shortform Catalog Scan PDF
    TC5565AFL-10L Toshiba 8,192 WORD x 8 BIT CMOS STATIC RAM Scan PDF
    TC5565AFL-10L Toshiba Vintage Memory Datasheet Scan PDF
    TC5565AFL-10L Toshiba Toshiba Shortform Catalog Scan PDF
    TC5565AFL-12 Toshiba 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology Original PDF
    TC5565AFL-12 Toshiba 8,192 WORD x 8 BIT CMOS STATIC RAM Scan PDF
    TC5565AFL-12 Toshiba Vintage Memory Datasheet Scan PDF
    TC5565AFL-12 Toshiba Toshiba Shortform Catalog Scan PDF
    TC5565AFL-12L Toshiba 8,192 WORD x 8 BIT CMOS STATIC RAM Scan PDF
    TC5565AFL-12L Toshiba Vintage Memory Datasheet Scan PDF
    TC5565AFL-12L Toshiba Toshiba Shortform Catalog Scan PDF
    TC5565AFL-15 Toshiba 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology Original PDF
    TC5565AFL-15 Toshiba 8,192 WORD x 8 BIT CMOS STATIC RAM Scan PDF
    TC5565AFL-15 Toshiba Vintage Memory Datasheet Scan PDF
    TC5565AFL-15 Toshiba Toshiba Shortform Catalog Scan PDF
    TC5565AFL-15L Toshiba 8,192 WORD x 8 BIT CMOS STATIC RAM Scan PDF
    TC5565AFL-15L Toshiba Vintage Memory Datasheet Scan PDF

    TC5565A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EPROM 2764

    Abstract: TC5565AFL-10 TMM2764D TC5565AFL-12 TC5565AFL-15 TC5565APL TC5565APL-10 TC5565APL-12 TC5565APL-15 TC5565AFL15
    Text: TOSHIBA MOS MEMORY PRODUCTS TC5565APL-10, TC5565APL-12, TC5565APL-15 TC5565AFL-10, TC5565AFL-12, TC5565AFL-15 DESCRIPTION The TC5565APL/AFL is 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum


    Original
    TC5565APL-10, TC5565APL-12, TC5565APL-15 TC5565AFL-10, TC5565AFL-12, TC5565AFL-15 TC5565APL/AFL 100ns/120ns/150ns. EPROM 2764 TC5565AFL-10 TMM2764D TC5565AFL-12 TC5565AFL-15 TC5565APL TC5565APL-10 TC5565APL-12 TC5565APL-15 TC5565AFL15 PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original
    CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original
    CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8,192 W O R D X 8 B IT C M O S STA TIC R A M ¡d e s c r i p t i o n ] The TC5565APL/AFL is a 65,336 hit static random access m em ory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques


    OCR Scan
    TC5565APL/AFL 100ns/120ns/150ns. 100ns/div TC5565APLâ TC5565APL-12 TC5565APL-15 TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 PDF

    capacitor ja8

    Abstract: NC JA8 capacitor 5sV80
    Text: 8,192 WORD X 8 BIT CMOS STATIC RAM IDESCRIPTIONI The TC5565A PL/AFL is a 6 5 ,5 3 6 b it sta tic ran d o m a c c e ss m em ory o rg a n iz ed a s 8,192 w o rd s by 8 b its u sin g CMOS technology, a n d o p e ra te s fro m a sin g le 5V supply. A dvan ced c irc u it tec h n iq u e s


    OCR Scan
    TC5565A TC5565APL--10, TC5565APL-12 TC5565APL-15 TC5565AFL-10, TC5565AFL-12 TC5565AFL-15 DIP28-P-600) capacitor ja8 NC JA8 capacitor 5sV80 PDF

    TC5565APL

    Abstract: TMM2764D
    Text: 8,192 W O R D X 8 BIT CM O S STATIC RAM ¡DESCRIPTION] The TC5565APL/AFL is a 65,536 bit static ra n d o m access m em o ry organized, as 8,192 w ords by 8 bits u sin g CMOS technology, an d o p erate s fro m a single 5V supply. A dvanced circu it tech n iq u es


    OCR Scan
    TC5565APL/AFL 100ns/120ns/150ns. suit-28 TC5565APLâ TC5565APL-12, TC5565APL-15 TC5565AFLâ TC5565AFL-12, TC5565APL TMM2764D PDF

    Untitled

    Abstract: No abstract text available
    Text: 8,192 WORD X 8 BIT CMOS STATIC RAM ]d e s c r i p t i o n ! The TC5565APL/AFL is a 65,536 "bit static random access memory organized as 8,198 words by 8 bits u sin g CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features w ith a m axim um operating current of 5mA/MHz


    OCR Scan
    TC5565APL/AFL 100ns/120ns/150ns. TC5565APLâ TC5565APL-12L, TC5565APL-15L TC5565AFLâ TC5565AFL-12L, TC5565AFL-15L DIP28-P-600) PDF

    TC5565APL15

    Abstract: IC5565APL TC5585AFL-15
    Text: TOSHIBA MOS MEMORY PRODUCTS TC5565APL-10, TC5565APL-12, TC5565APL-15 TC5565AFL-10, TC5565AFL-12, TC5565AFL-15 ,_, [DESCRIPTION! The TC5565APL/AFL is 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced cir­


    OCR Scan
    TC5565APL-10, TC5565APL-12, TC5565APL-15 TC5565AFL-10, TC5565AFL-12, TC5565AFL-15 TC5565APL/AFL 100ns/120ns/150ns. TC5565APL15 IC5565APL TC5585AFL-15 PDF

    5565APL

    Abstract: 5563APL-12 C5563 IC5565APL
    Text: TOSHIBA MOS MEMORY PRODUCTS 8,192 WORD X 8 BIT CMOS STATIC RAM TC5565APL-10L, TC5565APL-12L, TC5565APL-15L TC5565AFL-10L, TC5565AFL-12L, TC5565AFL-15L SILICO N GATE C M O S DESCRIPTION The TC5565APL/AFL is 6 5 ,5 3 6 bit static random access memory organized as 8,1 92 words by 8 bits


    OCR Scan
    TC5565APL-10L, TC5565APL-12L, TC5565APL-15L TC5565AFL-10L, TC5565AFL-12L, TC5565AFL-15L TC5565APL/AFL 6D28A-P) F28GA-P) 5565APL 5563APL-12 C5563 IC5565APL PDF

    TC5565

    Abstract: TC5565APL-12L 2764 eprom A12CZ a5c5 TC5565APL TMM2764D TC5565AFL15L A6c4 TC5565APL-15L
    Text: 8,192 W O RD X 8 BIT C M O S STATIC RAM ¡d e s c r i p t i o n ! The TC5565APL/AFL is a 65,5 3 6 b it sta tic ran d o m access m em ory o rg an ized as 8,192 w ords by 8 b its u sin g CMOS technology, an d o p erate s from a sin g le 5V supply. A dvanced c irc u it te ch n iq u es


    OCR Scan
    TC5565APL/AFL 100ns/120ns/150ns. 100ns/div TC5565APLâ TC5565APL-12L, TC5565APL-15L TC5565AFLâ TC5565AFL-12L, TC5565 TC5565APL-12L 2764 eprom A12CZ a5c5 TC5565APL TMM2764D TC5565AFL15L A6c4 TC5565APL-15L PDF

    tc8568

    Abstract: TC5568APL tc856 2764D TC5565 TC5565AFL15L TC556 PL12L TMM2764D
    Text: 8,192 WORD X 8 BIT CMOS STATIC RAM Id e s c r i p t i o n ! The TC5565APL/AFL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features w ith a maximum operating current of 5mA/MHz


    OCR Scan
    TC5565APL/AFL 100ns/120ns/150ns. TC5568APL/AFL TC5565APL--10L, TC5565APL-12L, TC5565APL-15L TC5565AFL--10L, TC5565AFL-12L, TC5565AFL-15L DIP28-P-600) tc8568 TC5568APL tc856 2764D TC5565 TC5565AFL15L TC556 PL12L TMM2764D PDF

    Untitled

    Abstract: No abstract text available
    Text: • ■ ! ■ ■ ■ ■ • '|<f TOSHIBA MIOS MEMORY PRODUCTS 8,192 WORD X 8 BIT CM OS STATIC RAM SILICON GATE C M O S T C 5 5 63 A P L-1 0, T C 5563A P L-12 T C 55 6 3 A P L -1 5 DESCRIPTIO N The TC5563APL is 65,536 bit static random access memory organized as 8,1 92 words by 8 bits


    OCR Scan
    TC5563APL TMM2764D) 6D28A-P) PDF

    a12t

    Abstract: TC5563APL-15L TC5563APL-12L c0ee
    Text: 8,192 WORD X 8 BIT CMOS STATIC RAM iDESCRI PTIONl The TC5563APL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz


    OCR Scan
    TC5563APL 100ns/120ns/150ns. TC5563APL-1 TC5563APL-12L TC5563APL-15L DIP28-P-300B) a12t TC5563APL-15L c0ee PDF

    Untitled

    Abstract: No abstract text available
    Text: 8.192 W O R D X 8 B IT C M O S S TA TIC R A M ¡DESCRIPTION | The TC5563A PL is a 6 5 5 3 6 bit static ra n dom a c ce s s m e m o ry organized as 8 .1 9 2 words by 8 bits u s in g CMOS tech nology, and o p e rate s from a sin gle 5V supply. Advanced c ir c u it te ch n iq u e s


    OCR Scan
    TC5563A TC5563APLâ TC5563APL-12 TC5563APL-15 DIP28-P-300B) PDF

    UPD444C

    Abstract: SRM2264LC10 hm6116 SRM2264LCT10
    Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238


    OCR Scan
    DIP-24pin OP2-24pin DIP-24pln OP-24pin DIP-28pin OP-28pin UPD444C SRM2264LC10 hm6116 SRM2264LCT10 PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan
    KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


    OCR Scan
    J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576 PDF

    TCD142D

    Abstract: TCD143D Epson matrix ccd line stepping motor EPSON EM 328 Matrix CCD "line sensor" Epson tcd142 Epson matrix ccd tcd143 TC55257APL-12 matrix CCD Scanner epson
    Text: 1 INTEGRATED CIRCUIT TOSHIBA . TECHNICAL TELECOM M UNICATION LSI TC35180F DATA TC35180F 1. TENTATIVE GENERAL DESCRIPTION The TC35180F is an L S I which processes a series of pixcel signals read by a scanner in a facsimile apparatus. The L S I performs shading correction and various image processing to reproduce distinct


    OCR Scan
    TC35180F TC35180F TC351 1989-3Q EJC-TC3S180F-48 30-SEP 1989-4Q EJC-TC35180F-49 TCD142D TCD143D Epson matrix ccd line stepping motor EPSON EM 328 Matrix CCD "line sensor" Epson tcd142 Epson matrix ccd tcd143 TC55257APL-12 matrix CCD Scanner epson PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan
    41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    Untitled

    Abstract: No abstract text available
    Text: 8,192 WORD X 8 BIT CMOS STATIC RAM Id e s c r i p t i o n I The TC5563APL is a 65,536 bit static random access m emory organized as 8,192 words by 8 bits u sin g CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features w ith a m axim um operating current of 5mA7MHz


    OCR Scan
    TC5563APL 100ns/120ns/150ns. TC5563APLâ TC5563APL-12L DIP28-P-300B) PDF

    MN12261

    Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
    Text: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating


    OCR Scan
    N1224 16-DIP 18-DIP SO-18D 14-DlP MN12261 MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram PDF

    FND LT 542

    Abstract: RBL 43 P 530 SE TMPZ84C00 pins of FND LT 542 dsasl
    Text: HARD DISK CONTROLLER TC8561F TENTATIVE Hard Disk Controller 1. GENERAL DESCRIPTION T h e T C 8 5 6 1 F H D C is a h i g h efficiency 108 73 h a rd disk c o n tro lle r w ith a b u ilt-in disk c o n tro lle r , s y s te m i n te r f a c e , b u f f e r m e m o r y


    OCR Scan
    TC8561F QFP144 TC8561F-90 FND LT 542 RBL 43 P 530 SE TMPZ84C00 pins of FND LT 542 dsasl PDF

    TC5563APL-12

    Abstract: No abstract text available
    Text: 8,192 WORD X 8 BIT CMOS STATIC RAM [DESCRIPTION The TC5563APL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz


    OCR Scan
    TC5563APL 100ns/120ns/150ns. TC5563APL--10, TC5563APL-12 TC5563APL-15 DIP28-P-300B) PDF

    TMM2764D

    Abstract: TC5563APL-15L TC5563APL-10 TC5563APL-12 TC5563APL-15 TC5565APL
    Text: 8.192 W ORD X 8 BIT C M O S STATIC RAM [DESCRIPTION I T he TC5563APL is a 65 5 3 6 b it sta tic r a n d o m ac cess m e m o r y o rg a n iz e d as 8.192 w o rd s b y 8 bits u s in g CMOS te ch no lo g y, a n d o p e ra te s fro m a sin g le 5V supply. A d v a n c ed c irc u it te c h n iq u e s


    OCR Scan
    TC5563APL 100ns/120ns/150ns. 100ns/div TC5563APLâ TC5563APL-12 DIP28-P-300B) TMM2764D TC5563APL-15L TC5563APL-10 TC5563APL-12 TC5563APL-15 TC5565APL PDF