TC518129
Abstract: TC518129AFWI-10
Text: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 29AFW I is a 1M bit high speed C M O S p se udo static RAM organized as 131,07 2 w o rd s by 8 bits. T h e T C 5 1 8 1 29AFW I utilizes a on e tra nsistor d yn am ic m e m ory cell w ith C M O S peripheral circuitry to provide high capacity, high speed a nd low p o w e r
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TC518129AFWI-10
29AFW
D-122
T08HIBA
D-123
TC518129
TC518129AFWI-10
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC518129AFWI-10 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129AFWI is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129AFWI utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
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OCR Scan
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PDF
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TC518129AFWI-10
TC518129AFWI
TC518129AFWI
D-121
D-122
D-123
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