TARF1503E Search Results

TARF1503E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
TARF1503E		Tachyonics	Microwave Transistor RF Small Signal Transistor		Original	PDF

TARF1503E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
A 69157 Abstract: 276-145 transistor 585-42 ice 0565 151-237 74292 ic 74210 16-878-1 TARF1503E 74288 Text: TARF1503E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1503E is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package	Original	PDF	TARF1503E OT-523 TARF1503E OT523 10GHz 800GHz 000GHz 200GHz 400GHz A 69157 276-145 transistor 585-42 ice 0565 151-237 74292 ic 74210 16-878-1 74288
121-351 Abstract: 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125 Text: THN6301 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure Pin Configuration NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA	Original	PDF	THN6301 OT343 OT523 THN6301KF OT323 THN6301Z THN6301U 000GHz 200GHz 121-351 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125
44606 Abstract: 63817 76231 THN6301 THN6301E THN6301S THN6301U THN6301Z 58168 52174 Text: Semiconductor THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA	Original	PDF	THN6301 OT-523 OT-23 THN6301U OT-323 THN6301Z OT-343 THN6301E 000GHz 200GHz 44606 63817 76231 THN6301E THN6301S THN6301U THN6301Z 58168 52174

Catalog Datasheet

MFG & Type

PDF

Document Tags

A 69157

Abstract: 276-145 transistor 585-42 ice 0565 151-237 74292 ic 74210 16-878-1 TARF1503E 74288
Text: TARF1503E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1503E is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package

Original

PDF

TARF1503E OT-523 TARF1503E OT523 10GHz 800GHz 000GHz 200GHz 400GHz A 69157 276-145 transistor 585-42 ice 0565 151-237 74292 ic 74210 16-878-1 74288

121-351

Abstract: 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125
Text: THN6301 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure Pin Configuration NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA

Original

PDF

THN6301 OT343 OT523 THN6301KF OT323 THN6301Z THN6301U 000GHz 200GHz 121-351 35219 ic pt 2358 57290 76546 0 281 002 468 460-1 PIN CONFIGURATION IC 555 S 196 156 230 T125

44606

Abstract: 63817 76231 THN6301 THN6301E THN6301S THN6301U THN6301Z 58168 52174
Text: Semiconductor THN6301 Series SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA

Original

PDF

THN6301 OT-523 OT-23 THN6301U OT-323 THN6301Z OT-343 THN6301E 000GHz 200GHz 44606 63817 76231 THN6301E THN6301S THN6301U THN6301Z 58168 52174