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    IRFI734G

    Abstract: SiHFI734G-E3
    Text: IRFI734G, SiHFI734G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Dynamic dV/dt • Low Thermal Resistance • Lead (Pb)-free


    Original     		PDF IRFI734G, SiHFI734G O-220 18-Jul-08 IRFI734G SiHFI734G-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFI734G, SiHFI734G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Dynamic dV/dt • Low Thermal Resistance • Lead (Pb)-free


    Original     		PDF IRFI734G, SiHFI734G O-220 12-Mar-07

    IRFI734G

    Abstract: SiHFI734G-E3
    Text: IRFI734G, SiHFI734G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Dynamic dV/dt • Low Thermal Resistance • Lead (Pb)-free


    Original     		PDF IRFI734G, SiHFI734G O-220 18-Jul-08 IRFI734G SiHFI734G-E3