3161
Abstract: Si7921DN Si7921DN-T1
Text: Si7921DN New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.063 @ VGS = - 10 V - 5.1 0.110 @ VGS = - 4.5 V - 3.8 - 30 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package
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Si7921DN
Si7921DN-T1
S-31613--Rev.
11-Aug-03
3161
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Untitled
Abstract: No abstract text available
Text: Si7921DN Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 30 rDS(on) (Ω) ID (A) 0.063 at VGS = – 10 V – 5.1 0.110 at VGS = – 4.5 V – 3.8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7921DN
Si7921DN-T1
08-Apr-05
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Si7921DN
Abstract: Si7921DN-T1
Text: Si7921DN Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 30 rDS(on) (Ω) ID (A) 0.063 at VGS = – 10 V – 5.1 0.110 at VGS = – 4.5 V – 3.8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7921DN
Si7921DN-T1
18-Jul-08
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Si7921DN
Abstract: 72514
Text: SPICE Device Model Si7921DN Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7921DN
09-Sep-03
72514
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Untitled
Abstract: No abstract text available
Text: Si7921DN Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 rDS(on) (Ω) ID (A) 0.063 @ VGS = –10 V –5.1 0.110 @ VGS = –4.5 V –3.8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7921DN
Si7921DN-T1
08-Apr-05
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Si7921DN
Abstract: Si7921DN-T1
Text: Si7921DN Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 rDS(on) (Ω) ID (A) 0.063 @ VGS = –10 V –5.1 0.110 @ VGS = –4.5 V –3.8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7921DN
Si7921DN-T1
S-51210
27-Jun-05
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Si7921DN
Abstract: Si7921DN-T1
Text: Si7921DN Vishay Siliconix New Product Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 30 rDS(on) (Ω) ID (A) 0.063 at VGS = – 10 V – 5.1 0.110 at VGS = – 4.5 V – 3.8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7921DN
Si7921DN-T1
S-51210
27-Jun-05
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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