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    Vishay Intertechnologies SUB75N08-10-E3

    N Channel Mosfet, 75V, 75A, To-263, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:75A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5Vrohs Compliant: Yes |Vishay SUB75N08-10-E3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SUB75N08-10-E3 Reel 800
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    Vishay Siliconix SUB75N08-10

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    Bristol Electronics SUB75N08-10 130
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    Quest Components SUB75N08-10 104
    • 1 $3.456
    • 10 $3.456
    • 100 $1.728
    • 1000 $1.728
    • 10000 $1.728
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    SUB75N08 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUB75N08-09L Vishay Siliconix MOSFETs Original PDF
    SUB75N08-09L-E3 Vishay Transistor Mosfet N-CH 75V 75A 3TO-263 Original PDF
    SUB75N08-09L SPICE Device Model Vishay N-Channel 75-V (D-S), 175°C MOSFET Original PDF
    SUB75N08-10 Vishay Intertechnology N-Channel Enhancement-Mode Transistor Original PDF
    SUB75N08-10 Vishay Siliconix MOSFETs Original PDF
    SUB75N08-10-E3 Vishay Transistor Mosfet N-CH 75V 75A 3TO-263 Original PDF
    SUB75N08-10 SPICE Device Model Vishay N-Channel Enhancement-Mode Transistors Original PDF

    SUB75N08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7093

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 7093

    TF 4890

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 18-Jul-08 TF 4890

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N08-10 Siliconix N-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N08Ć10 Top View SUP75N08Ć10 NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75N08-10 O220AB SUB75N0810 SUP75N0810 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98

    SUP75N08-10

    Abstract: SUB75N08-10
    Text: SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View SUP75N08-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N08-10 O-220AB O-263 SUB75N08-10 SUP75N08-10 O-220AB O-263) O-263 08-Apr-05 SUP75N08-10 SUB75N08-10

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-09L Vishay Siliconix N-Channel 75-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-09L S-71504Rev. 06-Aug-07

    sup75n08

    Abstract: SUP75N08-10 SUB75N08-10
    Text: SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View SUP75N08-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N08-10 O-220AB O-263 SUB75N08-10 SUP75N08-10 O-220AB O-263) O-263 18-Jul-08 sup75n08 SUP75N08-10 SUB75N08-10

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 Vishay Siliconix N-Channel Enhancement-Mode Transistors CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 18-Jul-08

    SUP75N08

    Abstract: SUB75N08-10
    Text: SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N08Ć10 Top View SUP75N08Ć10 NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75N08-10 O220AB SUB75N0810 SUP75N0810 O-220AB O-263) O-263 28-Nov-94 SUP75N08 SUB75N08-10

    DIODE B-10

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-10 Vishay Siliconix N-Channel Enhancement-Mode Transistors CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 S-60545Rev. 10-Apr-06 DIODE B-10

    SUB75N08-09L

    Abstract: SUP75N08-09L
    Text: SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 75 "75 a 0.011 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-09L


    Original     		PDF SUP/SUB75N08-09L O-220AB O-263 SUB75N08-09L SUP75N08-09L O-220AB O-263) O-263 S-60951--Rev. 26-Apr-99 SUB75N08-09L SUP75N08-09L

    SUP75N08

    Abstract: No abstract text available
    Text: SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N08Ć10 Top View SUP75N08Ć10 NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SUP/SUB75N08-10 O220AB SUB75N0810 SUP75N0810 O-220AB O-263) O-263 28-Nov-94 SUP75N08

    SUB75N08-10

    Abstract: SUP75N08-10
    Text: SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View SUP75N08-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF SUP/SUB75N08-10 O-220AB O-263 SUB75N08-10 SUP75N08-10 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98 SUB75N08-10 SUP75N08-10

    SUB75N08-09L

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N08-09L Vishay Siliconix N-Channel 75-V D-S , 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-09L 04-May-99 SUB75N08-09L

    SUB75N08-10 SPICE Device Model

    Abstract: 57TR
    Text: SPICE Device Model SUP/SUB75N08-10 Vishay Siliconix N-Channel Enhancement-Mode Transistors CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit Schematic • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP/SUB75N08-10 14-Sep-98 SUB75N08-10 SPICE Device Model 57TR

    S6095

    Abstract: sup75n08 SUB75N08-09L SUP75N08-09L
    Text: SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 75 "75 a 0.011 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-09L


    Original     		PDF SUP/SUB75N08-09L O-220AB O-263 SUB75N08-09L SUP75N08-09L O-220AB O-263) O-263 18-Jul-08 S6095 sup75n08 SUB75N08-09L SUP75N08-09L

    SUP75N08

    Abstract: No abstract text available
    Text: SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 75 "75 a 0.011 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-09L


    Original     		PDF SUP/SUB75N08-09L O-220AB O-263 SUP75N08-09L SUB75N08-09L O-220AB O-263) O-263 250cs 08-Apr-05 SUP75N08

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    sub75n08-09l

    Abstract: No abstract text available
    Text: SUP/SUB75N08-09L VISHAY Vishay Siliconix New Product N-Channel 75-V D-S , 175°C MOSFET PRODUCT SUMMARY V(BR)DSS (V ) (A) Id r DS(on) 0.009 @ V GS = 10 V 75 ±75 a 0.011 @ V g s = 4 .5 V D TO-220AB Q o TO-263 1 t inr DRAIN connected to TAB G D <JÎ S Top V iew


    OCR Scan     		PDF SUP/SUB75N08-09L O-220AB O-263 08-09L 08-09L 26-Apr-99 S-60951-- -Apr-99 sub75n08-09l

    T0252

    Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
    Text: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)


    OCR Scan     		PDF SMB60N03-10L SMP60N03-10L SMD30N03-30L SMU30N03-30L SUD30N03-30 SUD50N03-10 SUB75N05-06 SUP75N05-06 SUD45N05-20L SMD25N05-45L T0252 SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251