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    STP33N10FI Search Results

    STP33N10FI Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP33N10FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP33N10FI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP33N10FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP33N10FI Unknown Shortform Datasheet & Cross References Data Short Form PDF

    STP33N10FI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP33N10

    Abstract: STP33N10FI 3318A
    Text: STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI VDSS R DS on ID 100 V 100 V < 0.06 Ω < 0.06 Ω 33 A 18 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP33N10 STP33N10FI 100oC 175oC O-220 ISOWATT220 STP33N10 STP33N10FI 3318A

    STP33N10

    Abstract: STP33N10FI
    Text: STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V 100 V < 0.06 Ω < 0.06 Ω 33 A 18 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP33N10 STP33N10FI 100oC 175oC O-220 ISOWATT220 STP33N10 STP33N10FI

    STP33N10

    Abstract: STP33N10FI
    Text: STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N10 STP33N10FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.06 Ω < 0.06 Ω 33 A 18 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP33N10 STP33N10FI 100oC 175oC O-220 ISOWATT220 STP33N10 STP33N10FI

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    33n10

    Abstract: DD 127 D
    Text: £ j ï SGS-THOMSON ULKgraMOeS STP33N10 STP33N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP33N 10 S T P 3 3 N 1 0FI . . . . . . . . V dss RDS on Id 100 V 100 V < 0 .0 6 Q. < 0 .0 6 Q. 33 A 18 A TYPICAL R DS(on) = 0.045 Q. AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STP33N10 STP33N10FI TP33N 33n10 DD 127 D

    33N10

    Abstract: SGS Transistor
    Text: STP33N1o STP33N10FI SGS-THOMSON iLü «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP33N 10 STP33N 10FI V dss RDS on Id 100 V 0 .0 6 L i 33 A 100 V 0 .0 6 a 18 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STP33N1o STP33N10FI STP33N O-220 ISOWATT220 STP33N1 33N10 SGS Transistor

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 712^237 D04b441 êST « S f i T H SCS-THOMSON iGÄ¥^@iO £S STP33N10 STP33N1OFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP33N 10 S TP33N 10FI • . . ■ ■ . . ■ V d ss RDS(on Id 100 V 100 V < 0 .0 6 £2 < 0 .0 6 n 33 A 18 A TYPICAL R D S (o n ) = 0.045 £i


    OCR Scan     		PDF D04b441 STP33N10 STP33N1O TP33N 7T2T237 D04b447 STP33N10/FI