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    STK22N05 Search Results

    STK22N05 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STK22N05 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STK22N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STK22N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    STK22N05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK22N05

    Abstract: No abstract text available
    Text: STK22N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STK22N05 50 V < 0.065 Ω 22 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STK22N05 100oC 175oC OT-82 OT-194 STK22N05

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡U È T O « S T K 22 N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STK22N05 . . • . . . ■ . R D S o n Id < 0.065 Q. 22 A dss 50 V TYPICAL RDs(on) = 0.048 Q. AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STK22N05 OT-194 P032B

    Untitled

    Abstract: No abstract text available
    Text: £ T 7 Ä 7 # S G M S - T H O M S f i» [ L [ iO S O N T * S S T K 2 2 N 0 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR . • ■ . . . TYPE V dss R dS(oîi Id STK22N05 50 V 0.065 Q 22 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STK22N05 OT-82 OT-194

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON iL iO M iQ £ I S T K 2 2 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R DS(on) Id STK22N 05 50 V < 0.065 a 22 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STK22N

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


    OCR Scan     		PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V