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    STGWT80V60DF Price and Stock

    STMicroelectronics STGWT80V60DF

    IGBT 600V 120A 469W TO-3P
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    STMicroelectronics STGWT80V60DF 25 1
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    TME STGWT80V60DF 1
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    Avnet Silica STGWT80V60DF 33 Weeks 30
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    STGWT80V60DF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STGWT80V60DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 120A 469W TO-3P Original PDF

    STGWT80V60DF Datasheets Context Search

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    Abstract: No abstract text available
    Text: STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution


    Original     		PDF STGW80V60DF STGWT80V60DF O-247 DocID024362

    GW80V60DF

    Abstract: STGW80V60DF fieldstop igbt
    Text: STGW80V60DF STGWT80V60DF 600 V, 80 A very high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  Very high speed switching series  Tail-less switching off 2 3 3 2 1 1 TO-247  Low saturation voltage: VCE sat = 1.85 V (typ.)


    Original     		PDF STGW80V60DF STGWT80V60DF O-247 DocID024362 GW80V60DF fieldstop igbt