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    STMicroelectronics STFI13NM60N

    MOSFET N-CH 600V 11A I2PAKFP
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    STFI13NM60N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    STFI13NM60N STMicroelectronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 11A I2PAK FP Original PDF

    STFI13NM60N Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS @Tjmax STFI13NM60N 650 V RDS(on) max PTOT ID < 0.36 Ω 11 A 25 W • Fully insulated and low profile package with increased creepage path from pin to heatsink


    Original
    PDF STFI13NM60N O-281)

    13nm60n

    Abstract: No abstract text available
    Text: STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in I²PakFP Preliminary data Features Type VDSS @Tjmax STFI13NM60N 650 V RDS(on) max ID PTOT < 0.36 Ω 11 A 25 W • Fully insulated and low profile package with increased creepage path from pin to heatsink


    Original
    PDF STFI13NM60N 13nm60n

    1,3nm60n

    Abstract: 13nm60n AM03306v1
    Text: STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS @Tjmax STFI13NM60N 650 V RDS(on) max PTOT ID < 0.36 Ω 11 A 25 W • Fully insulated and low profile package with increased creepage path from pin to heatsink


    Original
    PDF STFI13NM60N O-281) 1,3nm60n 13nm60n AM03306v1

    13NM60

    Abstract: 13NM60N 13nm60n equivalent 1,3nm60n
    Text: STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in I2PakFP Preliminary data Features Type VDSS @Tjmax STFI13NM60N 650 V RDS(on) max ID PTOT < 0.36 Ω 11 A TBD • Fully insulated and low profile package with increased creepage path from pin to heatsink


    Original
    PDF STFI13NM60N 13NM60 13NM60N 13nm60n equivalent 1,3nm60n