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    STDL130 Search Results

    STDL130 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STDL130 ASIC Samsung Electronics Glossary of analog terms Original PDF
    STDL130 ASIC Samsung Electronics Package capabilities Original PDF
    STDL130 ASIC Samsung Electronics Characteristics Original PDF
    STDL130 ASIC Samsung Electronics Version 1.0 (1st edition - Jan. 9th, 2001) Original PDF
    STDL130 ASIC Samsung Electronics Equivalent standard load for layers Original PDF
    STDL130 ASIC Samsung Electronics Maximum fanout Original PDF
    STDL130 ASIC Samsung Electronics Primitive Latches Original PDF
    STDL130 ASIC Samsung Electronics Primitive Flip-Flops Original PDF
    STDL130 ASIC Samsung Electronics Primitive Miscellanies Original PDF
    STDL130 ASIC Samsung Electronics High Density Memories Original PDF
    STDL130 ASIC Samsung Electronics Primitive Overview Original PDF
    STDL130 ASIC Samsung Electronics Primitive Logic Cells Original PDF
    STDL130 ASIC Samsung Electronics Introduction Original PDF

    STDL130 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TR 104

    Abstract: 0532 /X3DR
    Text: BUSHOLDER Cell List Cell Name BUSHOLDER_LP Function Description Bus Holder Logic Symbol Cell Data Input Load SL Y 6.7 Y STDL130 3-340 Gate Count 1.33 Samsung ASIC INTERNAL CLOCK DRIVERS Cell List Cell Name Function Description CK2_LP Internal Clock Driver CMOS 2mA


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    STDL130 TR 104 0532 /X3DR PDF

    TDA 3619

    Abstract: Data sheet TDA 3619 TDA 8701 AN star delta FORWARD / REVERSE WIRING CONNECTION tda 9592 OA2222L TDA 810 amplifier sm 4109 TAG 8907 TDA audio power amplifier
    Text: Revision History Based on Hard Copy . - 1’st Edition(V1.0) : April. 2003 • Chapter 1 : Introduction • Chapter 2 : DC Electrical Characteristics(Recommended Operating Conditions) • Chapter 3 : Primitive Cells • Chapter 5 : Compiled Memories STDL130


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    STDL130 TDA 3619 Data sheet TDA 3619 TDA 8701 AN star delta FORWARD / REVERSE WIRING CONNECTION tda 9592 OA2222L TDA 810 amplifier sm 4109 TAG 8907 TDA audio power amplifier PDF

    tl 0741

    Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


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    STDL130 tl 0741 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Appendix Glossary of Analog Terms A Digital-to-Analog Converter Digital-to-Analog Converter Appendix A 1. Resolution - An n-bit binary converter should be able to provide 2n distinct and different analog output values corresponding to the set of n-bit binary words. A


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    STDL130 PDF

    GCK 164

    Abstract: samsung 649 ao21 OA21D
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.204ns, one fanout (SL = 0.00486pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2_lp ad2b_lp ad2bd2_lp


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    204ns, 00486pF, 048pF, 048pF ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 GCK 164 samsung 649 ao21 OA21D PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    th 2167.1

    Abstract: tda 7244 TDA 3553 TDA 2010 Circuit tda 266 tda 8895 tda 8956 tda 2222 BPW 34 datasheet TDA 2010
    Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1


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    STDL130 th 2167.1 tda 7244 TDA 3553 TDA 2010 Circuit tda 266 tda 8895 tda 8956 tda 2222 BPW 34 datasheet TDA 2010 PDF

    AO211

    Abstract: AO22 ao21
    Text: LOGIC CELLS Cell Names & Function Descriptions Cell Name Function Description AD2_LP 2-Input AND with 1X Drive AD2D2_LP 2-Input AND with 2X Drive AD2D4_LP 2-Input AND with 4X Drive AD2D8_LP 2-Input AND with 8X Drive AD2B_LP 2-Input AND with one Inverted Input, 1X Drive


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    STDL130 AO211 AO22 ao21 PDF

    15037 equivalent

    Abstract: No abstract text available
    Text: Appendix Timings B Equivalent Standard loads for 4-layer and 5-layer Metal Interconnect Appendix B Equivalent Standard loads for 4-layer and 5-layer Metal Interconnect Gate Count Fanouts 1 2 3 4 5 6 7 8 16 32 64 5000 0.795 1.635 2.297 3.204 3.840 4.702 5.263


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    STDL130 15037 equivalent PDF

    pcb design 0,5 mm pitch

    Abstract: SAMSUNG 834 QFP PACKAGE thermal resistance package tsop1 12 x 12 fbga thermal resistance
    Text: Appendix Package Capabilities D Package Appendix D Package The most current package availability and capability can be obtained from your local Samsung Technology and Design Centers. • In-house ❏ Sub-contractor LQFP Package 0707 mm 1010 mm 1212 mm 1420 mm


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    STDL130 pcb design 0,5 mm pitch SAMSUNG 834 QFP PACKAGE thermal resistance package tsop1 12 x 12 fbga thermal resistance PDF

    TDA 3619

    Abstract: TDA 9340 Data sheet TDA 3619 tda 2888 0428 ci an 7591 102-060 AN 7591 POWER AMPLIFIER inverter SK 40037 TDA 810 amplifier tda 8841
    Text: Revision History - 1’st Edition: October 2000 - 2’nd Edition: April 2003 • Chapter 1: Introduction • Chapter 2: DC Electrical Characteristics Recommended Operating Conditions • Chapter 3: Primitive Cells • Chapter 5: Complied Memories STDL131


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    STDL131 TDA 3619 TDA 9340 Data sheet TDA 3619 tda 2888 0428 ci an 7591 102-060 AN 7591 POWER AMPLIFIER inverter SK 40037 TDA 810 amplifier tda 8841 PDF

    samsung 019

    Abstract: AO211 AO22
    Text: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V2.1)


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    STDL130 samsung 019 AO211 AO22 PDF

    samsung

    Abstract: ao21 mux 232 AO211 AO22
    Text: Internal Macrocells 3 Contents Overview . 3-1 Summary Tables. 3-2


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    STDL130 samsung ao21 mux 232 AO211 AO22 PDF

    B12 diode

    Abstract: buffer cmos 1.8V 3.3v to 5v buffer latch
    Text: Electrical Characteristics 2 Contents DC Electrical Characteristics . 2-1 ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS The following tables define the DC electrical characteristics for the standard LVCMOS I/O buffers


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    STDL130 B12 diode buffer cmos 1.8V 3.3v to 5v buffer latch PDF

    sl 0380

    Abstract: sck 057 439 datasheet d flip flop Q 371 Transistor SCK 084 056 SCK 164 T Flip-Flop
    Text: FLIP-FLOPS Cell List Cell Name Function Description FD1_LP D Flip-Flop with 1X Drive FD1D2_LP D Flip-Flop with 2X Drive FD1CS_LP D Flip-Flop with Scan Clock, 1X Drive FD1CSD2_LP D Flip-Flop with Scan Clock, 2X Drive FD1S_LP D Flip-Flop with Scan, 1X Drive


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    STDL130 sl 0380 sck 057 439 datasheet d flip flop Q 371 Transistor SCK 084 056 SCK 164 T Flip-Flop PDF