STD111 Search Results

STD111 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STD111		Samsung Electronics	0.25um 2.5V CMOS Standard Cell Library for Pure Logic Products		Original	PDF
STD111 ASIC		Samsung Electronics	PLL 2013X		Original	PDF
STD111 ASIC		Samsung Electronics	Book Contents		Original	PDF
STD111 ASIC		Samsung Electronics	Introduction		Original	PDF
STD111 ASIC		Samsung Electronics	Characteristics		Original	PDF

STD111 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
tda 12155 Abstract: PURE SINE WAVE inverter schematic diagram schematic diagram ac-dc inverter inverter PURE SINE WAVE schematic diagram TRANSISTOR KT 838 1 phase pure sine wave inverter schematic sine wave inverter schematic IVT HS 400 5.1 AUDIO AMP TDA 2030 sine wave inverter schematic IVT pure sine wave using TL 494 Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change STD111 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	STD111 tda 12155 PURE SINE WAVE inverter schematic diagram schematic diagram ac-dc inverter inverter PURE SINE WAVE schematic diagram TRANSISTOR KT 838 1 phase pure sine wave inverter schematic sine wave inverter schematic IVT HS 400 5.1 AUDIO AMP TDA 2030 sine wave inverter schematic IVT pure sine wave using TL 494	PDF
tda 12155 Abstract: CL 6807 PURE SINE WAVE inverter schematic diagram TDA 7288 verilog code for 10 gb ethernet tda 7257 Modified Booth Multipliers oa31 diode SAMSUNG DATASHEET CHIP CAPACITOR CL-21 capacitor Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change STD111 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	STD111 tda 12155 CL 6807 PURE SINE WAVE inverter schematic diagram TDA 7288 verilog code for 10 gb ethernet tda 7257 Modified Booth Multipliers oa31 diode SAMSUNG DATASHEET CHIP CAPACITOR CL-21 capacitor	PDF
Samsung ASIC Abstract: ix 3368 OA321D2 AO4111 AO2222 oa211 diode STD111 LD2D2 SCG16 Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change STD111 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	STD111 PLL2013X Samsung ASIC ix 3368 OA321D2 AO4111 AO2222 oa211 diode STD111 LD2D2 SCG16	PDF
CTC 880 Abstract: vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284 Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2	Original	STD111 CTC 880 vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF
STD111 Abstract: No abstract text available Text: Electrical Characteristics 2 Contents DC Electrical Characteristics . 2-1 ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS VDD = 3.3 ± 0.3V, TA = -40 to 85°C, VEXT = 5 ± 0.25V In case of 5V tolerant	Original	STD111 STD111	PDF
samsung electrolytic capacitor Abstract: lf XTAL 20MHz samsung electrolytic capacitor datasheet 20MHZ PLL2013X STD111 20MHZ-170MHZ 104 ceramic capacitor Text: PLL 6 Contents PLL2013X . 6-1 PLL2013X General Description Features The PLL2013X is a Phase-Locked Loop PLL Frequency Synthesizer constructed in CMOS on	Original	PLL2013X PLL2013X 20-170MHz 170MHz STD111 samsung electrolytic capacitor lf XTAL 20MHz samsung electrolytic capacitor datasheet 20MHZ STD111 20MHZ-170MHZ 104 ceramic capacitor	PDF
SR2020CT-SR2040CT Abstract: 2040CT SR2040CT 2020CT 2050CT 2060CT SR2020CT SR2060CT Dual Schottky Rectifiers STD111 Text: BL GALAXY ELECTRICAL SR2020CT - - - SR2060CT REVERSE VOLTAGE: 20 - 60 V FORWARD CURRENT: 20 A DUAL SCHOTTKY RECTIFIERS FEATURES Metal-Semiconductor junction with guard ring TO-220AB Epitaxial construction For use in low voltage,high frequency inverters free	Original	SR2020CT SR2060CT O-220AB O--220AB STD-111 kkkk202, 08ounce, SR2020CT-SR2040CT SR2050CT-SR2060CT SR2020CT-SR2040CT 2040CT SR2040CT 2020CT 2050CT 2060CT SR2060CT Dual Schottky Rectifiers STD111	PDF
SR30100CT Abstract: No abstract text available Text: BL GALAXY ELECTRICAL SR3070CT-SR30100CT REVERSE VOLTAGE: 70 - 100 V FORWARD CURRENT: 30 A DUAL SCHOTTKY RECTIFIERS FEATURES Metal-Semiconductor junction with guard ring TO-220AB Epitaxial construction For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications	Original	SR3070CT-SR30100CT O-220AB O--220AB STD-111 kkkk202, SR30100CT	PDF