Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSM6G18NU Search Results

    SF Impression Pixel

    SSM6G18NU Price and Stock

    Toshiba America Electronic Components SSM6G18NU,LF

    MOSFET P-CH 20V 2A 6UDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSM6G18NU,LF Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.08967
    		Buy Now
    SSM6G18NU,LF Cut Tape 895 1
    • 1 $0.47
    • 10 $0.29
    • 100 $0.1841
    • 1000 $0.12312
    • 10000 $0.12312
    		Buy Now
    SSM6G18NU,LF Digi-Reel 1
    • 1 $0.47
    • 10 $0.29
    • 100 $0.1841
    • 1000 $0.12312
    • 10000 $0.12312
    		Buy Now
    Mouser Electronics SSM6G18NU,LF 2,730
    • 1 $0.47
    • 10 $0.288
    • 100 $0.174
    • 1000 $0.118
    • 10000 $0.08
    		Buy Now

    Toshiba America Electronic Components SSM6G18NU

    Transistor MOSFET P-Channel 20V 2A 6-Pin UDFN - Tape and Reel (Alt: SSM6G18NU,LF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SSM6G18NU Reel 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.08642
    		Buy Now

    SSM6G18NU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SSM6G18NU Toshiba Transistors Original PDF
    SSM6G18NU Toshiba Japanese - Transistors Original PDF
    SSM6G18NU,LF Toshiba America Electronic Components MOSFET P-CH 20V 2A 6UDFN Original PDF

    SSM6G18NU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM6G18NU 東芝複合素子 シリコン P チャネルMOS形 ＋エピタキシャルショットキバリア形 SSM6G18NU パワーマネージメントスイッチ Pch MOSFET とショットキバリアダイオードを 1 パッケージに内蔵 低 RDS ON 低 VF のため低損失:


    Original     		PDF SSM6G18NU

    Untitled

    Abstract: No abstract text available
    Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a Schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)


    Original     		PDF SSM6G18NU

    uDFN-6

    Abstract: No abstract text available
    Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)


    Original     		PDF SSM6G18NU uDFN-6

    Untitled

    Abstract: No abstract text available
    Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 m (max) (@VGS = -1.5V)


    Original     		PDF SSM6G18NU 150led

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3