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    Toshiba America Electronic Components SSM4K27CTTPL3

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    SSM4K27CT Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM4K27CT Toshiba Small-signal MOS FET Original PDF
    SSM4K27CT(TPL3) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V .5A CST4 Original PDF
    SSM4K27CTTPL3 Toshiba America Electronic Components MOSFET N-CH 20V .5A CST4 Original PDF

    SSM4K27CT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS SSM4K27CT Switching Applications • Small package • Low on-resistance: Unit: mm RDS(ON) = 205 m (max) (@VGS = 4.0 V) RDS(ON) = 260 m (max) (@VGS = 2.5 V) RDS(ON) = 390 m (max) (@VGS = 1.8 V)


    Original     		SSM4K27CT PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ SSM4K27CT ○ Switching Applications Unit: mm Top view • Suitable for high-density mounting due to compact package Low on-resistance: 0.2±0.02 Ron = 205 mΩ (max) (@VGS = 4.0 V)


    Original     		SSM4K27CT PDF

    SSM4K27CT

    Abstract: S50-0300
    Text: SSM4K27CT 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM4K27CT ○ 汎用スイッチ 単位: mm • オン抵抗が低い。 Top view : Ron = 205 mΩ 最大 (@VGS = 4.0 V) : Ron = 260 mΩ (最大) (@VGS = 2.5 V) • : Ron = 390 mΩ (最大) (@VGS = 1.8 V)


    Original     		SSM4K27CT SSM4K27CT S50-0300 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM4K27CT 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅢ SSM4K27CT 高速スイッチング用 単位: mm • オン抵抗が低い。: RDS(ON) = 205 mΩ (最大) (@VGS = 4.0 V) Top view 0.05±0.04 : RDS(ON) = 260 mΩ (最大) (@VGS = 2.5 V)


    Original     		SSM4K27CT PDF

    SSM4K27CT

    Abstract: No abstract text available
    Text: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ SSM4K27CT ○ Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on-resistance: Top view Ron = 205 mΩ (max) (@VGS = 4.0 V)


    Original     		SSM4K27CT SSM4K27CT PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ SSM4K27CT ○ Switching Applications • Small package • Low on-resistance: Unit: mm RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V)


    Original     		SSM4K27CT PDF

    SSM4K27CT

    Abstract: No abstract text available
    Text: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ SSM4K27CT ○ Switching Applications Unit: mm Top view • Suitable for high-density mounting due to compact package Low on-resistance: 0.2±0.02 Ron = 205 mΩ (max) (@VGS = 4.0 V)


    Original     		SSM4K27CT SSM4K27CT PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ SSM4K27CT ○ Switching Applications • Low on-resistance: Top view 0.05±0.04 Ron = 205 mΩ (max) (@VGS = 4.0 V) Ron = 260 mΩ (max) (@VGS = 2.5 V) 1.2±0.05 0.75 Ron = 390 mΩ (max) (@VGS = 1.8 V)


    Original     		SSM4K27CT PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅢ SSM4K27CT ○ Switching Applications • Small package • Low on-resistance: Unit: mm RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V)


    Original     		SSM4K27CT PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01 PDF

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF