Untitled
Abstract: No abstract text available
Text: SSG4490N N-Ch Enhancement Mode Power MOSFET 5.2 A, 100 V, RDS ON 78 m Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical
|
Original
|
PDF
|
SSG4490N
23-Apr-2010
|
SSG4490N
Abstract: MosFET
Text: SSG4490N 5.2 A, 100 V, RDS ON 78 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical
|
Original
|
PDF
|
SSG4490N
17-Dec-2010
SSG4490N
MosFET
|
secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
|
Original
|
PDF
|
SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
|
secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
|
Original
|
PDF
|
SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
|