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    SSF9N80A Search Results

    SSF9N80A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSF9N80A Fairchild Semiconductor N-CHANNEL POWER MOSFET Original PDF
    SSF9N80A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSF9N80A Fairchild Semiconductor Advanced Power MOSFET Scan PDF

    SSF9N80A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSF9N80A

    Abstract: No abstract text available
    Text: SSF9N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 1.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSF9N80A SSF9N80A

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSF9N80A

    Abstract: SSH9N80A
    Text: SSH9N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 1.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSH9N80A SSF9N80A SSH9N80A

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    SSH6N80

    Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
    Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0


    Original     		PDF MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSF9N80A Power MOSFET FEATURES - 800 V ^ D S o n = 1.3 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.000 £1 (Typ.) CD


    OCR Scan     		PDF SSF9N80A

    Untitled

    Abstract: No abstract text available
    Text: SSF9N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V Dss = 8 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max. @ V ^ = 800V


    OCR Scan     		PDF SSF9N80A

    800V 40A mosfet

    Abstract: SSF9N80A
    Text: Advanced SSF9N80A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = 6 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSF9N80A 800V 40A mosfet SSF9N80A

    Untitled

    Abstract: No abstract text available
    Text: SSF9N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25^A Max. @ VDS = 800V


    OCR Scan     		PDF 000i2 SSF9N80A

    SSF9N80A

    Abstract: No abstract text available
    Text: SSF9N80A Advanced Power MOSFET FEATURES B V d SS = 8 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA Max. @ VDS= 800V ^DS(on) = 1 .3 a


    OCR Scan     		PDF SSF9N80A 004G273 003b333 003b33M D03b335 SSF9N80A

    800V 40A mosfet

    Abstract: SSF9N80A SSH9N80A
    Text: Advanced SSH9N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge D S S — ^ D S o n = lD = ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSH9N80A 800V 40A mosfet SSF9N80A SSH9N80A

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

    Untitled

    Abstract: No abstract text available
    Text: SSH9N80A Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 800 V ^ D S o n = 1 . 3 Q. o ■ B V DSS - ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V


    OCR Scan     		PDF SSH9N80A

    SSD2104

    Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
    Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A