04n60s5
Abstract: No abstract text available
Text: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.95 Ω • Optimized capacitances
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PDF
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SPP04N60S5
SPB04N60S5
SPPx6N60S5/SPBx6N60S5
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4200
04n60s5
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04n60s5
Abstract: SPB04N60S5 SPP04N60S5
Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated
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Original
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PDF
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SPP04N60S5
SPB04N60S5
P-TO263-3-2
P-TO220-3-1
SPPx6N60S5/SPBx6N60S5
Q67040-S4200
04N60S5
04n60s5
SPB04N60S5
SPP04N60S5
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SPB04N60S5
Abstract: 04N60S5 SPP04N60S5 04N60
Text: SPP04N60S5 SPB04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity
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Original
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PDF
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SPP04N60S5
SPB04N60S5
SPPx6N60S5/SPBx6N60S5
SPP04N60S5
P-TO220-3-1
P-TO263-3-2
04N60S5
Q67040-S4200
SPB04N60S5
04N60S5
04N60
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04N60S5
Abstract: SPB04N60S5 SPP04N60S5
Text: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:
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Original
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PDF
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SPP04N60S5
SPB04N60S5
SPPx6N60S5/SPBx6N60S5
P-TO220-3-1
04N60S5
Q67040-S4200
P-TO263-3-2
SPP04N60S5
04N60S5
SPB04N60S5
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Untitled
Abstract: No abstract text available
Text: SIEM EN S SPPX6N60S5 SPBX6N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPTG5164 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX6N60S5 Vfas 600 V b 11.3 A f lDSion
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OCR Scan
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PDF
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SPPX6N60S5
SPBX6N60S5
VPTG5164
SPBX6N60S5
X6N60S5
P-T0220-3-1
P-T0263-3-2
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04n60s5
Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF
Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s
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OCR Scan
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PDF
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SPPx6N60S5/SPBx6N60S5
SPP04N60S5
SPB04N60S5
P-T0220-3-1
P-T0263-3-2
04N60S5
04N60S5
Q67040-S4200
transistor smd CF RQ
AG qd transistor SMD
AG qd SMD
SIEMENS 230 92 O
04n60
TRANSISTOR SMD MARKING CODE KF
marking S5
SMD TRANSISTOR MARKING CODE KF
DIODE SMD MARKING CODE KF
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FAG 32 diode
Abstract: No abstract text available
Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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OCR Scan
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PDF
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SPP04N60S5
SPB04N60S5
SPPx6N60S5/SPBx6N60S5
P-T0220-3-1
04N60S5
Q67040-S4200
P-T0263-3-2
FAG 32 diode
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