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    Abstract: No abstract text available
    Text: SML6070BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V) I(D) Max. (A)12.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)48.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)240 Minimum Operating Temp (øC)-55


    Original     		PDF SML6070BN

    sml5560bn

    Abstract: SML6070BN G33s
    Text: SEMELAB PLC bGE D 5 1 3 3 157 ClDGObSS G33 • S M L B llll MOS POWER 4 ËFFË rT - 3 °l - IS llll SML6060BN SML5560BN SML6070BN SML5570BN SEME LAB 600V 550V 600V 550V 13.0A 13.0A 12.0A 12.0A 0.60Q 0.60Í2 0.70Q 0.70Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF SML6060BN SML5560BN SML6070BN SML5570BN 5560BN 6060BN 5570BN 6070BN SML6060/6070BN O-247AD G33s