CAT-30
Abstract: No abstract text available
Text: SMB30A300 New Product Vishay General Semiconductor Asymmetric Transient Voltage Suppressor FEATURES • Glass passivated chip junction • Ideal for automated placement • Very fast response time • Low incremental surge resistance, excellent clamping capability
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SMB30A300
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AA
08-Apr-05
CAT-30
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SMB30A300
Abstract: TVS 30V JESD22-B102D J-STD-002B TVS VISHAY
Text: SMB30A300 New Product Vishay General Semiconductor Asymmetric Transient Voltage Suppressor Major Ratings and Characteristics IPPM 13 A VC 41.4 V VBR at TVS 30 V VBR at Diode 300 V Tj max. 150 °C DO-214AA SMB Features 30 V • • • • Glass passivated chip junction
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SMB30A300
DO-214AA
J-STD-020C
UL-94V-0
J-STD-002B
JESD22-B102D
08-Apr-05
SMB30A300
TVS 30V
JESD22-B102D
TVS VISHAY
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JESD22-B102D
Abstract: J-STD-002B 1525t
Text: New Product SMB30A300 Vishay General Semiconductor Asymmetric Transient Voltage Suppressor FEATURES • Glass passivated chip junction • Ideal for automated placement • Very fast response time • Low incremental surge resistance, excellent clamping capability
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Original
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PDF
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SMB30A300
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AA
J-STD-002B
JESD22-B102D
18-Jul-08
JESD22-B102D
1525t
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diode 270
Abstract: JESD22-B102D J-STD-002B SMB30A300
Text: New Product SMB30A300 Vishay General Semiconductor Asymmetric Transient Voltage Suppressor FEATURES • Glass passivated chip junction • Ideal for automated placement • Very fast response time • Low incremental surge resistance, excellent clamping capability
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Original
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PDF
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SMB30A300
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AA
J-STD-002B
JESD22-B102D
08-Apr-05
diode 270
JESD22-B102D
SMB30A300
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Untitled
Abstract: No abstract text available
Text: SMB30A300 Vishay General Semiconductor New Product Asymmetric Transient Voltage Suppressor FEATURES • Glass passivated chip junction • Ideal for automated placement • Very fast response time • Low incremental surge resistance, excellent clamping capability
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Original
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PDF
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SMB30A300
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AA
08-Apr-05
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smb30a
Abstract: No abstract text available
Text: SMB30A300 New Product Vishay General Semiconductor Asymmetric Transient Voltage Suppressor Major Ratings and Characteristics IPPM 13 A VC 41.4 V VBR at TVS 30 V VBR at Diode 300 V Tj max. 150 °C DO-214AA SMB Features 30 V • • • • Glass passivated chip junction
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Original
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PDF
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SMB30A300
DO-214AA
J-STD-020C
UL-94V-0
J-STD-002B
JESD22-B102D
17-Oct-05
smb30a
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Untitled
Abstract: No abstract text available
Text: New Product SMB30A300 Vishay General Semiconductor Asymmetric Transient Voltage Suppressor FEATURES • Glass passivated chip junction • Ideal for automated placement • Very fast response time • Low incremental surge resistance, excellent clamping capability
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Original
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PDF
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SMB30A300
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AA
08-Apr-05
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-0710
TRANSISTOR SMD MARKING CODE 1BW
SmD TRANSISTOR 1bw
transistor SMD 5BW
TRANSISTOR SMD MARKING CODE 1AM
5bw smd
smd code marking 5bw
KL SN 102 94v-0
smd transistor marking 3bw
smd transistor 1AM
yx 801
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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148 ph zener diode
Abstract: ph 41 zener diode Diode Zener C 47 pH 1N6373 DO215AA do213ab TVS SMBJ TVS VISHAY SM8A27 VMN-SG21
Text: Tr a n s Z o r b A v a l a n c h e T V S PAR ® A u t o m o t i v e T V S Powe r Vo l t a g e R e g u l a t i n g D i o d e s A s y m m e t r i c Tr a n s i e n t V o l t a g e S u p p r e s s o r w w w. v i s h a y. c o m S e l ect o r G ui d e Transient voltage suppressors
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VMN-SG2124-0712
148 ph zener diode
ph 41 zener diode
Diode Zener C 47 pH
1N6373
DO215AA
do213ab
TVS SMBJ
TVS VISHAY
SM8A27
VMN-SG21
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