Untitled
Abstract: No abstract text available
Text: CSD85312Q3E www.ti.com SLPS457 – NOVEMBER 2013 Dual 20 V N-Channel NexFET Power MOSFETs FEATURES . 1 • • • • • • • • • Common Source Connection Low Drain to Drain On-Resistance Space Saving SON 3.3 x 3.3 mm Plastic Package Optimized for 5 V Gate Drive
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CSD85312Q3E
SLPS457
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Untitled
Abstract: No abstract text available
Text: CSD85312Q3E www.ti.com SLPS457 – NOVEMBER 2013 Dual 20 V N-Channel NexFET Power MOSFETs FEATURES . 1 • • • • • • • • • Common Source Connection Low Drain to Drain On-Resistance Space Saving SON 3.3 x 3.3 mm Plastic Package Optimized for 5 V Gate Drive
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Original
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PDF
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CSD85312Q3E
SLPS457
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Untitled
Abstract: No abstract text available
Text: CSD85312Q3E www.ti.com SLPS457 – NOVEMBER 2013 Dual 20 V N-Channel NexFET Power MOSFETs FEATURES . 1 • • • • • • • • • Common Source Connection Low Drain to Drain On-Resistance Space Saving SON 3.3 x 3.3 mm Plastic Package Optimized for 5 V Gate Drive
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Original
|
PDF
|
CSD85312Q3E
SLPS457
|
Untitled
Abstract: No abstract text available
Text: CSD85312Q3E www.ti.com SLPS457 – NOVEMBER 2013 Dual 20 V N-Channel NexFET Power MOSFETs FEATURES . 1 • • • • • • • • • Common Source Connection Low Drain to Drain On-Resistance Space Saving SON 3.3 x 3.3 mm Plastic Package Optimized for 5 V Gate Drive
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Original
|
PDF
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CSD85312Q3E
SLPS457
|