Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIGC223T120R2CL Search Results

    SF Impression Pixel

    SIGC223T120R2CL Price and Stock

    Infineon Technologies AG SIGC223T120R2CLX1S

    Trans IGBT Chip N-CH 1.2KV DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC223T120R2CLX1S)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIGC223T120R2CLX1S Waffle Pack 540
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    SIGC223T120R2CL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIGC223T120R2CL Infineon Technologies SIGC223T120R2CL, 1200V, 150A Original PDF

    SIGC223T120R2CL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for: • IGBT-Modules


    Original
    PDF SIGC223T120R2CL BSM150GB120DLC Q67050-A4286sawn 7121-P,

    7121

    Abstract: BSM150GB120DLC SIGC223T120R2CL
    Text: SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for: • IGBT-Modules


    Original
    PDF SIGC223T120R2CL SIGC223T120R2CL BSM150GB120DLC Q67050-A4286A101 7121-P, 7121 BSM150GB120DLC

    7121

    Abstract: A003 BSM150GB120DLC SIGC223T120R2CL igbt die 1200V
    Text: Preliminary SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for:


    Original
    PDF SIGC223T120R2CL BSM150GB120DLC Q67041-A4687sawn 7121-P, 7121 A003 BSM150GB120DLC SIGC223T120R2CL igbt die 1200V

    7121

    Abstract: BSM150GB120DLC SIGC223T120R2CL
    Text: Preliminary SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for:


    Original
    PDF SIGC223T120R2CL SIGC223T120R2CL BSM150GB120DLC Q67041-A4687A003 7121-P, 7121 BSM150GB120DLC

    7121

    Abstract: BSM150GB120DLC SIGC223T120R2CL
    Text: SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for: • IGBT-Modules


    Original
    PDF SIGC223T120R2CL SIGC223T120R2CL BSM150GB120DLC Q67041-A4687A003 7121-P, 7121 BSM150GB120DLC

    Untitled

    Abstract: No abstract text available
    Text: SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE ICn SIGC223T120R2CL 1200V 150A C This chip is used for: • IGBT-Modules


    Original
    PDF SIGC223T120R2CL SIGC223T120R2CL BSM150GB120DLC Q67050-A4286A101 7121-P,